MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL21193/D
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
MJL21193*
NPN
MJL21194*
*Motorola Preferred Device
PNP
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
CASE 340G–02
TO–3PBL
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current —
Peak (1)
Base Current – Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5.0
µs,
Duty Cycle
≤
10%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typical
Max
Unit
VCEO(sus)
ICEO
250
—
—
—
—
100
Vdc
µAdc
(continued)
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJL21193 MJL21194
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤2%
THD
hFE
unmatched
hFE
matched
fT
Cob
—
—
4
—
0.8
0.08
—
—
—
—
—
500
MHz
pF
%
hFE
25
8
VBE(on)
VCE(sat)
—
—
—
—
1.4
4
—
—
—
—
75
—
2.2
Vdc
Vdc
IS/b
4.0
2.25
—
—
—
—
Adc
IEBO
ICEX
—
—
—
—
100
100
µAdc
µAdc
Symbol
Min
Typical
Max
Unit
PNP MJL21193
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
6.5
6.0
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
10
VCE = 10 V
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.1
TJ = 25°C
ftest = 1 MHz
NPN MJL21194
10 V
VCE = 5 V
1.0
IC COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
2
Motorola Bipolar Power Transistor Device Data
MJL21193 MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
1000
1000
NPN MJL21194
hFE , DC CURRENT GAIN
TJ = 100°C
100
25°C
– 25°C
hFE , DC CURRENT GAIN
TJ = 100°C
25°C
100
– 25°C
VCE = 20 V
10
0.1
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21193
1000
1000
NPN MJL21194
hFE , DC CURRENT GAIN
TJ = 100°C
25°C
100
– 25°C
hFE , DC CURRENT GAIN
TJ = 100°C
25°C
100
– 25°C
VCE = 5 V
10
0.1
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJL21193
30
1.5 A
I C, COLLECTOR CURRENT (A)
25
20
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
0
0
I C, COLLECTOR CURRENT (A)
IB = 2 A
35
30
25
NPN MJL21194
IB = 2 A
1.5 A
1A
20
15
10
5.0
TJ = 25°C
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
0.5 A
1A
0.5 A
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
Motorola Bipolar Power Transistor Device Data
3
MJL21193 MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
3.0
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
VCE(sat)
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0
0.1
SATURATION VOLTAGE (VOLTS)
TJ = 25°C
IC/IB = 10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VBE(sat)
TJ = 25°C
IC/IB = 10
NPN MJL21194
VBE(sat)
VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21193
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
10
TJ = 25°C
10
TJ = 25°C
NPN MJL21194
VCE = 20 V (SOLID)
1.0
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
100
IC, COLLECTOR CURRENT (AMPS)
1 SEC
10
1.0
TC = 25°C
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
100
1000
0.1
1.0
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
MJL21193 MJL21194
10000
TC = 25°C
C, CAPACITANCE (pF)
Cib
C, CAPACITANCE (pF)
10000
TC = 25°C
Cib
1000
Cob
f(test) = 1 MHz)
100
0.1
1.0
10
100
1000
Cob
f(test) = 1 MHz)
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21193 Typical Capacitance
Figure 15. MJL21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
50
Ω
DUT
0.5
Ω
SOURCE
AMPLIFIER
0.5
Ω
8.0
Ω
DUT
–50 V
Figure 17. Total Harmonic Distortion Test Circuit
Motorola Bipolar Power Transistor Device Data
5
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