LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L8550PLT1G
Series
S-L8550PLT1G
Series
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
L8550PLT1G
L8550PLT3G
L8550QLT1G
L8550QLT3G
L8550RLT1G
L8550RLT3G
L8550SLT1G
L8550SLT3G
s-L8550PLT1G
s-L8550PLT3G
s-L8550QLT1G
s-L8550QLT3G
s-L8550RLT1G
s-L8550RLT3G
s-L8550SLT1G
s-L8550SLT3G
Marking
85P
85P
1YD
1YD
1YF
1YF
1YH
1YH
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2
EMITTER
1
BASE
COLLECTOR
3
SOT– 23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(1)
T
A
= 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
R
θJA
P
D
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /°C
°C/W
mW
mW /°C
°C/W
°C
R
θJA
T
J
, T
stg
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
S-L8550PLT1G
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=-1.0mA)
Emitter-Base Breakdown Voltage
(I
E
= -100
µA)
Collector-Base Breakdown voltage
(I
C
= -100
µA)
Collector Cutoff Current
(V
CB
= -35 V)
Emitter Cutoff Current
(V
EB
= -4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ON CHARACTERISTICS
Characteristic
DC Current Gain
(I
C
=-100mA, V
CE
=-1V)
Collector-Emitter Saturation Voltage
(I
C
=-800mA, I =-80mA)
B
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
-25
-5
-40
–
–
–
–
–
–
–
–
–
–
-150
-150
V
V
V
nA
nA
I
EBO
Symbol
H
FE
V
CE(S)
Min
100
–
Typ
–
–
Max
600
-0.5
Unit
V
NOTE:
*
h
FE
P
100~200
Q
150~300
R
200~400
S
300~600
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
S-L8550PLT1G
Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
G
H
J
K
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.085
0.35
0.89
2.10
0.45
0.100
0.177
0.69
1.02
2.64
0.60
C
D
H
L
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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