LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
High Voltage: V
CEO
= -50 V.
Epitaxial planar type.
NPN complement: L2SC1623
L2SA812QLT1G Series
S-L2SA812QLT1G Series
3
1
2
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA812QLT1G
S-L2SA812QLT1G
L2SA812QLT3G
S-L2SA812QLT3G
L2SA812RLT1G
S-L2SA812RLT1G
L2SA812RLT3G
S-L2SA812RLT3G
L2SA812SLT1G
S-L2SA812SLT1G
L2SA812SLT3G
S-L2SA812SLT3G
Marking
M8
M8
M6
M6
M7
M7
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
SOT-23
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
L2SA812
-50
-60
-6
-150
Unit
V
V
V
mAdc
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
=25
o
C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
o
Symbol
P
D
Max
Unit
o
200
o
mW
mW/
o
C
o
1.8
R
θ
JA
556
C
/
W
P
D
200
2.4
417
-55 to +150
Tj ,Tstg
o
mW
mW/
o
C
C
/
W
o
C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
Min
-50
-6
-60
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=-1mA)
Emitter-Base Breakdown Voltage
(I
E
=-50
µΑ
)
Collector-Base Breakdown Voltage
(I
C
=-50
µA)
Collector Cutoff Current
(V
CB
=-50V)
Emitter Cutoff Current (V
BE
=-6V)
I
CBO
I
EBO
-
-
-0.1
-0.1
µA
µA
ON CHARACTERISTICS
DC Current Gain
(I
C
=-1mA,V
CE
=-6.0V)
Collector-Emitter Saturation Voltage
(I
C
=-100mA,I
B
=-10mA)
Base -Emitter On Voltage
I
E
=-1.0mA,V
CE
=-6.0V)
h
FE
120
-
560
V
CE(sat)
V
BE
-
-0.58
-0.18
-0.62
-0.3
-0.68
V
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(V
CE
=-6.0V,I
E
=-10mA)
Output Capacitance(V
CE
= -10V, I
E
=0, f=1.0MHz)
h
FE
Values are classified as followes
NOTE:
*
h
FE
Q
120~270
R
180~390
S
270~560
F
t
C
obo
-
-
180
4.5
-
-
MHz
pF
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
Fig.1 Grounded emitter propagation characteristics
–50
Fig.2 Grounded emitter output characteristics( )
–10
–35.0
T
A
= 25°C
–31.5
–28.0
–24.5
–20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
T
A
= 100°C
25°C
– 40°C
V
CE
= –10 V
–8
–10
–50
–6
–21.0
–17.5
–2
–1
–4
–14.0
–10.5
–0.5
–2
–7.0
–3.5µA
–0.2
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
–0.4
–0.8
–1.2
–1.6
I
B
=0
–2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
–100
Fig.4 DC current gain vs. collector current ( )
500
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
–80
T
A
= 25°C
h
FE
, DC CURRENT GAIN
–60
500
450
400
350
300
V
CE
= –5 V
–3V
–1V
200
–250
–200
–40
–150
–100
100
–20
–50
µA
I
B
=0
0
–1
–2
–3
–4
–5
50
0
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
500
–1
T
A
= 100°C
25°C
T
A
= 25°C
–0.5
h
FE
, DC CURRENT GAIN
–40°C
200
–0.2
I
C
/I
B
= 50
–0.1
100
20
10
50
–0.05
V
CE
= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
–1
Fig.8 Gain bandwidth product vs. emitter current
1000
I
C
/I
B
= 10
–0.5
f
r
, TRANSITION FREQUENCY(MHz)
T
A
= 25°C
V
CE
= –12V
500
–0.2
200
–0.1
T
A
= 100°C
25°C
–40°C
100
–0.05
50
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
E
, EMITTER CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
C
ib
10
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ob
5
2
–0.5
–1
–2
–5
–10
–20
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
