epitex
Opto-Device & Custom LED
High Power Top LED SMBB770-1100
Lead ( Pb ) Free Product – RoHS Compliant
SMBB770-1100
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3)
Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
Silver Plated on Copper
PA9T
Silicone Resin
AlGaAs
1000um*1000um
1pce
770nm typ.
High Power Top LED
SMBB770-1100
High Power Top LED
SMBB770-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package
These devices are available to be operated and 300mW/sr at IFP=2A.
♦Outer
dimension (Unit: mm)
♦Absolute
Maximum Ratings [Ta=25°C]
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
R
thja
Tj
T
OPR
T
STG
T
SOL
Maximum Rated Value
2000
800
2000
5
10
120
-40 ~ +100
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
Item
Forward Voltage
Opto-Device & Custom LED
High Power Top LED SMBB770-1100
Lead ( Pb ) Free Product – RoHS Compliant
♦Electro-Optical
Characteristics [Ta=25°C typ.]
Symbol
V
F
V
FP
P
O
Condition
I
F
=800mA
I
FP
=2A
I
F
=800mA
I
FP
=2A
I
F
=800mA
I
FP
=2A
I
F
=800mA
I
F
=800mA
I
F
=100mA
I
F
=800mA
I
F
=800mA
760
Minimum
Typical
2.3
3.2
290
700
125
300
770
25
±65
70
75
780
Maximum
2.5
Unit
V
Radiated Power
mW
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
I
E
λ
P
∆λ
θ
1/2
tr
tf
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by CIE127-2007 Condition B.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
Opto-Device & Custom LED
High Power Top LED SMBB770-1100
Lead ( Pb ) Free Product – RoHS Compliant
Forward Curent - Forward Voltage
10
Relative Radiant Intensity -
Forward Current
(ta=25°C, tw=10µs, Duty=1%)
(ta=25°C, tw=10µs, Duty=1%)
Relative Radiant Intensity (A.U.)
800mA Standard
1
Forward Current (mA)
1000
100
0.1
10
0.01
0.001
1
1.2
1.6
2.0
2.4
2.8
3.2
1
10
100
1000
Forward Voltage (V)
Forward Current (mA)
Forward Current - Pulse Duration
3
Allowable Forward Current -
Ambient Temperature
1000
Rthja=10K/W
2
Allowable Forward Current(mA)
4
900
800
700
600
500
400
300
200
100
0
Forward Current Ifp [mA]
1000
9
8
7
6
5
4
3
2
10kHz
100Hz
1kHz
10Hz
100
-3
10
10
-2
10
-1
10
0
10
1
10
2
10
3
1Hz
10
0
20
40
60
80
100
120
Duration tw [ms]
Ambient Temperature (°C)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
2.8
Opto-Device & Custom LED
High Power Top LED SMBB770-1100
Lead ( Pb ) Free Product – RoHS Compliant
Forward Voltage -
Ambient Temperture
10
Relative Radiant Intensity -
Ambient Temperature
If=800mA
Relative Radiant Intensity (A.U.)
2.7
2.6
9
8
7
6
5
4
3
If=800mA
Forward Voltage (V)
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
0
20
40
60
80
100
2
1
9
8
7
6
5
4
3
2
0.1
0
20
40
60
80
100
Ambient Temperatture (°C)
Ambient Temperature (°C)
Peak Wavelength -
Ambient Temperature
880
If=800mA
860
840
820
800
780
760
740
720
700
680
0
20
40
60
80
100
Peak Wavelength (nm)
Ambient Temperature (°C)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
1.0
Opto-Device & Custom LED
High Power Top LED SMBB770-1100
Lead ( Pb ) Free Product – RoHS Compliant
Relative Spectral Emission
1.0
Radiation Characteristics
Relative Radiant Intensity (A.U.)
Relative Radiant Intensity (A.U.)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
(ta=25°C)
0.9
±65
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
700
750
800
850
-90
-60
-30
0
30
60
90
Wavelength (nm)
Angle (deg.)
Radiation Characteristics
-20
-30
-40
-10
0
10
20
30
40
50
60
70
80
±65
Angle (deg.)
-50
-60
-70
-80
-90
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
90
Relative Radiant Intensity (A.U.)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
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