Datasheet> 器件分类 > 分立半导体> 二极管> S-L1SS181LT1G

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S-L1SS181LT1G: 产品描述Rectifier Diode, 2 Element, 0.05A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3; 产品类别分立半导体二极管; 文件大小64KB，共3页; 制造商LRC; 官网地址http://www.lrc.cn

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S-L1SS181LT1G概述

Rectifier Diode, 2 Element, 0.05A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

S-L1SS181LT1G规格参数

参数名称	属性值
包装说明	R-PDSO-G3
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3
元件数量	2
端子数量	3
最高工作温度	125 °C
最大输出电流	0.05 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
最大功率耗散	0.15 W
参考标准	AEC-Q101
最大重复峰值反向电压	85 V
最大反向恢复时间	0.004 µs
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Ultra High Speed Switching

L1SS181LT1G

S-L1SS181LT1G

Application

Low forward voltage : V

F (3)

= 0.92V (typ.)

Fast reverse recovery time : t

= 1.6ns (typ.)

Small total capacitance : C

= 2.2pF (typ.)

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

ANODE

SOT –23

CATHODE

Driver Marking

L1SS181LT1G = A3

Maximum Ratings

= 25°C)

Characteristic

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

Junction temperature

Storage temperature range

* : Unit rating. Total rating = Unit rating × 1.5.

Symbol

FSM

stg

Rating

300 *

100 *

150

125

-55~+125

Unit

°C

Electrical Characteristics

= 25°C)

Characteristic

Symbol

F (1)

F (2)

F (3)

R (1)

R (2)

Test

Circuit

–

Test Condition

= 1mA

= 10mA

= 100mA

= 30V

= 80V

= 0, f = 1MH

= 10mA (Fig.5)

Min

–

Typ.

0.61

0.74

0.90

–

2.2

1.6

Max

–

1.20

0.1

0.5

4.0

Unit

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

µA

Ordering Information

Device

L1SS181LT1G

S-L1SS181LT1G

L1SS181LT3G

S-L1SS181LT3G

10000/Tape&Reel

Marking

Shipping

3000/Tape&Reel

Rev.O 1/3

S-L1SS181LT1G相似产品对比

	S-L1SS181LT1G	S-L1SS181LT3G
描述	Rectifier Diode, 2 Element, 0.05A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3	Rectifier Diode, 2 Element, 0.05A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
包装说明	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
配置	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3	R-PDSO-G3
元件数量	2	2
端子数量	3	3
最高工作温度	125 °C	125 °C
最大输出电流	0.05 A	0.05 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
最大功率耗散	0.15 W	0.15 W
参考标准	AEC-Q101	AEC-Q101
最大重复峰值反向电压	85 V	85 V
最大反向恢复时间	0.004 µs	0.004 µs
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL

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