LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
•
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
•
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
LDTB114ELT1G
S-LDTB114ELT1G
3
1
2
SOT-23
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
IN
I
C
P
D
Tj
Tstg
−50
−40
to
+10
−500
200
150
−55
to
+150
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
LDTB114ELT1G
S-LDTB114ELT1G
LDTB114ELT3G
S-LDTB114ELT3G
Marking
F14
F14
R1 (K)
10
10
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
Min.
−
−3
−
−
−
56
7
0.8
−
Typ.
−
−
−0.1
−
−
−
10
1
200
Max.
−0.5
−
−0.3
−0.88
−0.5
−
13
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−10mA
I
O
/I
I
=
−50mA/−2.5mA
V
I
=
−5V
V
CC
=
−50V,
V
I
=0V
V
O
=
−5V,
I
O
=
−50mA
−
−
V
CE
=
−10V,
I
E
=50mA, f=100MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTB114ELT1G ;S-LDTB114ELT1G
Electrical characteristic curves
-100
-50
-20
-10
-5
-2
-1
Ta=
−40
C
25 C
100 C
OUTPUT CURRENT : Io (
A)
V
O
=
−0.3V
INPUT VOLTAGE : V
I (on)
(
V)
-10m
-5m
Ta= 100 C
25 C
-2m
−40
C
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
V
CC
=
−5V
-500m
-200m
-100m
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
-0.5
-1
-1.5
-2
-2.5
-3
OUTPUT CURRENT : I
O
(
A
)
INPUT VOLTAGE : V
I (off)
(
V)
Fig.1
Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
-1
1k
l
O
/l
I
=20
Ta=100 C
25 C
−40
C
V
O
=
−5V
Ta=100 C
25 C
−40
C
(
V)
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-500µ -1m -2m
-5m -10m -20m -50m -100m -200m -500m
500
DC CURRENT GAIN : G
I
(on)
200
100
50
20
10
5
2
OUTPUT VOLTAGE : V
O
1
-500µ -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : I
O
(
A)
OUTPUT CURRENT : I
O
(
A)
Fig.4 Output voltage vs. output current
Fig.3 DC current gain vs. output
current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTB114ELT1G ;S-LDTB114ELT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
微控制器 MCU
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