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SML60C13

产品描述13A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN
产品类别分立半导体    晶体管   
文件大小21KB,共2页
制造商SEMELAB
下载文档 详细参数 选型对比 全文预览

SML60C13概述

13A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN

SML60C13规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码TO-254AA
包装说明FLANGE MOUNT, S-XSFM-P3
针数3
Reach Compliance Codeunknown
雪崩能效等级(Eas)960 mJ
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压600 V
最大漏极电流 (ID)13 A
最大漏源导通电阻0.5 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-254AA
JESD-30 代码S-XSFM-P3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)40 A
认证状态Not Qualified
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
SML60C13
TO–254 Package Outline.
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
V
DSS
I
D(cont)
R
DS(on)
3.81 (0.150)
BSC
600V
13A
0.5Ω
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO–254 Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 7.5mH, R
G
= 25Ω, Peak I
L
= 13A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
600
13
40
±30
±40
150
1.2
–55 to 150
300
13
30
960
V
A
A
V
W
W/°C
°C
A
mJ
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5656
Issue 2

SML60C13相似产品对比

SML60C13 SML60C13R1
描述 13A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN 13A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN
是否Rohs认证 不符合 符合
零件包装代码 TO-254AA TO-254AA
包装说明 FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3
针数 3 3
Reach Compliance Code unknown compliant
雪崩能效等级(Eas) 960 mJ 960 mJ
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 600 V 600 V
最大漏极电流 (ID) 13 A 13 A
最大漏源导通电阻 0.5 Ω 0.5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-254AA TO-254AA
JESD-30 代码 S-XSFM-P3 S-XSFM-P3
元件数量 1 1
端子数量 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 UNSPECIFIED UNSPECIFIED
封装形状 SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 40 A 40 A
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1

 
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