ZXMN4A06G
40V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 40V; R
DS(ON)
= 0.05
DESCRIPTION
I
D
= 7A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT223 package
SOT223
APPLICATIONS
•
DC - DC Converters
•
Audio Output Stages
•
Relay and Solenoid driving
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN4A06GTA
ZXMN4A06GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
•
ZXMN
4A06
Top View
ISSUE 1 - MAY 2002
1
ZXMN4A06G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C(b)
V
GS
=10V; T
A
=70°C(b)
V
GS
=10V; T
A
=25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
40
20
7.0
5.6
5.0
22
5.4
22
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32.2
UNIT
°C/W
°C/W
ISSUE 1 - MAY 2002
2
ZXMN4A06G
CHARACTERISTICS
I
D
Drain Current (A)
10
1
R
DS(on)
Limited
Max Power Dissipation (W)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80 100 120 140 160
DC
1s
100ms
10ms
1ms
100µs
100m
Single Pulse
10m
T
amb
= 25° C
V
DS
Drain-Source Voltage (V)
1
10
Temperature (° C)
Safe Operating Area
Thermal Resistance (° C/W)
T
amb
= 25° C
Derating Curve
Maximum Power (W)
70
60
50
40
30
20
10
0
100µ 1m 10m 100m 1
D= 0.2
Single Pulse
D= 0.05
D= 0.1
D= 0.5
100
Single Pulse
T
amb
= 25° C
10
Pulse Width (s)
10
100
1k
1
100µ 1m 10m 100m 1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 1 - MAY 2002
3
ZXMN4A06G
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
0.8
19.86
16.36
0.95
V
ns
nC
T
J
=25°C, I
S
=2.5A,
V
GS
=0V
T
J
=25°C, I
F
=2.5A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.55
4.45
28.61
7.35
18.2
2.1
4.5
ns
ns
ns
ns
nC
nC
nC
V
DS
=30V,V
GS
=10V,
I
D
=2.5A
(refer to test circuit)
V
DD
=30V, I
D
=2.5A
R
G
=6.0 , V
GS
=10V
(refer to test circuit)
C
iss
C
oss
C
rss
770
92
61
pF
pF
pF
V
DS
=40 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
8.7
1.0
0.050
0.075
S
40
1
100
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=40V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=3.2A
V
DS
=15V,I
D
=2.5A
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2002
4
ZXMN4A06G
TYPICAL CHARACTERISTICS
I
D
Drain Current (A)
I
D
Drain Current (A)
T = 25° C
10V 4V
3.5V
3V
2.5V
T = 150° C
10V
4V
3.5V
3V
2.5V
2V
V
GS
1.5V
10
10
1
V
GS
2V
1
0.1
0.1
0.1
1
10
V
DS
Drain-Source Voltage (V)
0.1
1
10
V
DS
Drain-Source Voltage (V)
Output Characteristics
1.8
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
I
D
Drain Current (A)
10
T = 150° C
T = 25° C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
V
GS
= 10V
I
D
= 4.5A
R
DS(on)
1
V
DS
= 10V
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
1
V
GS
Gate-Source Voltage (V)
1.5V
2V
T = 25° C
V
GS
2.5V
3V
3.5V
2
3
4
50
100
150
Tj Junction Temperature (° C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
Normalised Curves v Temperature
I
SD
Reverse Drain Current (A)
10
10
T = 150° C
1
T = 25° C
1
0.1
1
10
4V
10V
0.1
0.2
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
1.4
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - MAY 2002
5
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
