DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD48
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 1999 Apr 22
2001 Feb 1
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
FEATURES
•
Transistors with different polarity
and built-in bias resistors
– TR1 (NPN):
R1 = 47 kΩ; R2 = 47 kΩ
– TR2 (PNP):
R1 = 2.2 kΩ; R2 = 47 kΩ
•
No mutual interference between
the transistors
•
Simplification of circuit design
•
Reduces number of components
and board space.
APPLICATIONS
•
Especially suitable for space
reduction in interface and driver
circuits
•
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN/PNP resistor-equipped
transistors in an SC-88 plastic
package.
1
Top view
2
3
MAM343
PUMD48
handbook, halfpage
6
5
4
R1
TR1
R2
5
4
6
R2
TR2
R1
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
PINNING
PIN
1, 4
2, 5
1, 4
MBK120
DESCRIPTION
emitter
base
collector
TR1; TR2
TR1; TR2
TR1; TR2
6, 3
2, 5
6, 3
MARKING
TYPE NUMBER
PUMD48
MARKING
CODE
4t8
Fig.2
Equivalent inverter
symbol.
2001 Feb 1
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C
−
MIN.
PUMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Notes
1. Refer to SC-88 standard mounting conditions.
total power dissipation
300
mW
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
+5
−12
100
100
200
+150
150
+150
V
V
mA
mA
mW
°C
°C
°C
+40
−10
V
V
open emitter
open base
open collector
50
50
10
V
V
V
2001 Feb 1
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
80
−
−
3
33
0.8
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
I
C
= 0; V
EB
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
C
=
−100 µA;
V
CE
=
−5
V
I
C
=
−5
mA; V
CE
=
−0.3
V
−
100
−
−
−1.1
1.54
17
I
E
= i
e
= 0; V
CB
=
−10
V;
f = 1 MHz
−
TYP.
−
−
−
−
−
−
1.2
1.6
47
1
−
−
−
−
−0.6
−0.75
2.2
21
−
PARAMETER
CONDITIONS
VALUE
416
PUMD48
UNIT
K/W
thermal resistance from junction to ambient note 1
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°C
Transistor TR1 (NPN)
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
------
-
R1
C
c
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
------
-
R1
C
c
emitter cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 5 V
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 0.3 V
90
−
150
0.8
−
61
1.2
2.5
pF
µA
mV
V
V
kΩ
mV
V
V
kΩ
µA
100
1
50
nA
µA
µA
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
Transistor TR2 (PNP)
emitter cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
180
−
−100
−0.5
−
2.86
26
3
pF
collector-emitter saturation voltage I
C
=
−5
mA; I
B
=
−0.25
mA
2001 Feb 1
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD48
handbook, halfpage
(2)
10
3
MDA973
handbook, halfpage
(1)
10
−1
MDA972
hFE
VCEsat
(V)
(1)
(2)
(3)
10
2
(3)
10
1
10
−1
1
10
IC (mA)
10
2
10
−2 −1
10
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
TR1 (NPN);
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
10
MDA975
10
2
handbook, halfpage
Vi(on)
MDA974
Vi(off)
(V)
(1)
(V)
10
1
(2)
(3)
(1)
1
(3) (2)
10
−1
10
−2
10
−1
1
IC (mA)
10
10
−1
10
−1
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
TR1 (NPN);
V
CE
= 0.3 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
Fig.5
Input-off voltage as a function of collector
current; typical values.
Fig.6
Input-on voltage as a function of collector
current; typical values.
2001 Feb 1
5
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