NTD26N08, NTD26N08L
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80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
Gate–Body Leakage Current
(VGS =
±20
Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
NTD26N08
NTD26N08L
Static Drain–to–Source
On–Resistance
(ID = 13 Adc)
NTD26N08, VGS= 10 V
NTD26N08L, VGS = 5 V
VGS(th)
2.0
1.0
RDS(on)
3.0
1.5
4.0
2.0
mΩ
Vdc
V(BR)DSS
80
IDSS
–
–
IGSS
–
–
–
–
1.0
10
nAdc
±100
–
–
µAdc
Vdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
26 AMPERES
26N08 Typ RDS(on) = 37 mΩ
26N08L Typ RDS(on) = 41 mΩ
DPAK
CASE 369A
STYLE 2
–
–
37
41
–
–
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2000
1
October, 2000 – Rev. 0
Publication Order Number:
NTD26N08/D
NTD26N08, NTD26N08L
PACKAGE DIMENSIONS
DPAK
CASE 369A–13
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
---
0.030
0.050
0.138
---
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
---
0.77
1.27
3.51
---
–T–
B
V
R
4
SEATING
PLANE
C
E
A
S
1
2
3
Z
U
K
F
L
D
G
2 PL
J
H
0.13 (0.005)
M
T
STYLE 2:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor
and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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PUBLICATION ORDERING INFORMATION
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Phone:
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Phone:
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Toll Free
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Email:
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Phone:
81–3–5740–2700
Email:
r14525@onsemi.com
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Sales Representative.
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