MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21090/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
•
Typical W–CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power: 11.5 Watts
Efficiency: 16%
Gain: 12.2 dB
ACPR: –45 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Ease of Design for Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF21090
MRF21090S
2170 MHz, 90 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465B–02, STYLE 1
(MRF21090)
CASE 465C–01, STYLE 1
(MRF21090S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, –0.5
270
1.54
– 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF21090
MRF21090S
MRF21090
MRF21090S
Class
2 (Typical)
1 (Typical)
M3 (Typical)
M4 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
RF DEVICE DATA
©
Motorola, Inc. 2000
MRF21090 MRF21090S
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100
µAdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Gate Threshold Voltage
(VDS = 10 V, ID = 300
µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 750 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
Gps
10
11.7
—
dB
Crss
—
4.2
—
pF
gfs
VGS(th)
VGS(Q)
VDS(on)
—
2
3
—
7.2
3
3.8
0.1
—
4
5
0.6
S
Vdc
Vdc
Vdc
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
η
30
33
—
%
IMD
—
–30
–27.5
dBc
IRL
—
–12
–9.0
dB
Gps
η
Ψ
—
—
11.7
41
—
—
dB
%
No Degradation In Output Power
Before and After Test
MRF21090 MRF21090S
2
RF DEVICE DATA
R2
B1
VGG
+
C1
+
C2
C3
C4
R1
T11
+
C7
C8
C9
+
C10
C11
+
C13
V DD
RF OUTPUT
T10
RF INPUT
T1
C5
C6
T2
T3
T4
T5
DUT
T6
T7
T8
C12
C14
T9
B1
C1, C13
C2, C10
C3, C9
C4, C8
C5, C12
C6
C7
C11
C14
R1
R2
T1
T2
T3
T4
T5
T6
Ferrite Bead, Fair Rite, 2743019447
470
µF,
50 V Electrolytic Capacitor
22
µF,
35 V Tantalum Surface Mount Chip
Capacitor, Kemet
20 nF, RF Chip Capacitor, 100B203MCA500X, ATC
5.1 pF, RF Chip Capacitor, 100B5R1CCA500X, ATC
0.4 – 2.5 pF, Variable Capacitor, Johanson Gigatrim
10 pF, RF Chip Capacitor, 100B100JCA500X, ATC
1
m
F, 35 V Tantalum Surface Mount Chip Capacitor,
Kemet
1 nF, RF Chip Capacitor, 100B102JCA500X, ATC
8.2 pF, RF Chip Capacitor, 100B8R2CCA500X, ATC
13
Ω,
1/4 W Chip Resistor, RM73B2B130JT,
Garret Instrument
12
Ω,
1/4 W Chip Resistor, RM73B2B120JT,
Garret Instrument
30.7 x 2.09 mm Microstrip Line
5.99 x 2.09 mm Microstrip Line
7.55 x 9.89 mm Microstrip Line
3.77 x 15.71 mm Microstrip Line
6.89 x 26.17 mm Microstrip Line
14.93 x 32.05 mm Microstrip Line
10.23 x 2.09 mm Microstrip Line
6.03 x 2.09 mm Microstrip Line
23.98 x 2.09 mm Microstrip Line
29.82 x 1.15 mm Microstrip Line
17.08 x 1.15 mm Microstrip Line
Beryllium Copper Wear Blocks 5 mils Thick
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type N Jack Connectors, 3052–1648–10,
Omni Specra
4–40 Head Screws 0.125″ Long
4–40 Head Screws 0.188″ Long
4–40 Head Screws 0.312″ Long
4–40 Head Screws 0.438″ Long
Endplates Brass Endplates for Copper Bedstead
Bedstead
Copper Bedstead/Heatsink
Insert
Copper Bedstead Insert
Raw PCB
0.030″ Glass Teflon
®
, 2 oz Copper Clad
3″ x 5″ Arion
RF Circuit
3″ x 5″ Copper Clad PCB Teflon
®
,
MRF21090, CMR
T7
T8
T9
T10
T11
WS1, WS2
Figure 1. MRF21090 Test Circuit Schematic
C7 C8
Gate
Bias
Feed
C3 C4
C1
T1
C2
T2
C6
T3
C5
T4
T5
T6
C
U
T
O
U
T
T11
R1
B1
Drain
Bias
Feed
R2
T10
C9
C11
C10
T8
C14
C12
C13
T7
T9
MRF21090
Figure 2. Component Parts Layout
RF DEVICE DATA
MRF21090 MRF21090S
3
TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
60
IRL
–5
–10
–15
VDD = 28 Vdc
IDQ = 750 mA
Pout = 90 Watts (PEP)
Two–Tone Measurement
100 kHz Tone Spacing
–20
–25
–30
IMD
0
–35
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
2200
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
30
VDD = 28 Vdc
IDQ = 1000 mA
f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
ACPR
15
Gps
η
0
5.0
10
15
20
–50
–20
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
25
–30
40
30
η
20
–40
20
Gps
10
10
5
–60
–70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 3. Class AB Broadband Circuit
Performance
Figure 4. CDMA ACPR, Power Gain and Drain
Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc
f = 2140 MHz
–30 Two–Tone Measurement
100 kHz Tone Spacing
–35
–40
–45
–50
–55
IMD, INTERMODULATION DISTORTION (dBc)
–25
–20
–30
–40
–50
–60
–70
–80
VDD = 28 Vdc
IDQ = 750 mA
f = 2140 MHz
Two–Tone Measurement
100 kHz Tone Spacing
500 mA
2000 mA
1500 mA
3rd Order
5th Order
7th Order
800 mA
1000 mA
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
15
VDD = 28 Vdc
f = 2140 MHz
Two–Tone Measurement
100 kHz Tone Spacing
11.8
11.6
G ps, POWER GAIN (dB)
11.4
11.2
11.0
10.8
500 mA
IMD
100
10.6
f = 2140 MHz
IDQ = 750 mA
Pout = 90 Watts (PEP)
Two–Tone Measurement
100 kHz TS
Fixture Tuned for 28 Volts
–22
–24
–26
–28
–30
–32
–34
20
22
24
26
28
30
VDS, DRAIN VOLTAGE (VOLTS)
32
34
14
G ps, POWER GAIN (dB)
2000 mA
1500 mA
13
12
1000 mA
800 mA
Gps
11
10
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
RF DEVICE DATA
MRF21090 MRF21090S
4
Zo = 10
Ω
f = 2170 MHz
f = 2110 MHz
ZOL*
2170 MHz
Zin
2110 MHz
VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP)
f
MHz
2110
2140
2170
Zin
Zin
Ω
3.03 + j3.40
3.02 + j3.46
2.60 + j3.50
ZOL*
Ω
0.92 + j1.67
0.97 + j1.80
0.90 + j1.52
= Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given power, voltage, IMD,
bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
RF DEVICE DATA
MRF21090 MRF21090S
5
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