(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
J
Value
600
Unit
V
2.0
4.0
15
−65 to +175
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
12
86.7
330
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 4)
Instantaneous Reverse Current (Note 4)
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
Test Conditions
(I
F
= 2 A, T
C
= 125°C)
(I
F
= 2 A, T
C
= 25°C)
(Rated DC Voltage, T
C
= 125°C)
(Rated DC Voltage, T
C
= 25°C)
(I
F
= 2 A, d
IF
/d
t
= 30 A/ms, T
C
= 25°C)
Symbol
V
F
I
R
t
rr
I
RM
Q
rr
S
t
rr
I
RM
Q
rr
S
Typ
2.1
3.3
5.0
0.02
10
0.5
2.3
0.5
43
0.8
15
1.8
Max
3.0
4.2
50
1.0
50
3.0
10
3.0
−
−
−
−
Unit
V
mA
ns
A
nC
−
ns
A
nC
−
(I
F
= 2 A, d
IF
/d
t
= 30 A/ms, T
C
= 125°C)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
www.onsemi.com
2
NHP260SF, NRVHP260SF
TYPICAL CHARACTERISTICS
10
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
1
T
A
= 25°C
T
A
= 85°C
10
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
1
T
A
= 25°C
T
A
= −55°C
0
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 85°C
T
A
= −55°C
0
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1E−04
1E−05
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1E−03
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
1E−04
1E−06
1E−07
1E−08
1E−09
1E−05
1E−06
1E−07
T
A
= −55°C
200
300
400
500
600
T
A
= −55°C
200
300
400
500
600
1E−10
100
1E−08
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
4
Figure 4. Maximum Reverse Characteristics
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
10
R
qJC
= 12°C/W
DC
3
Square
Wave
2
1
R
qJC
= 12°C/W
0
0
20
40
60
80
100
120
140
160 180
T
C
, CASE TEMPERATURE (5C)
1
0.2
2
20
200
V
R
, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NHP260SF, NRVHP260SF
TYPICAL CHARACTERISTICS
14
I
PK
/I
AV
= 20
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
12
I
PK
/I
AV
= 10
10
8
I
PK
/I
AV
= 5
6
4
2
DC
0
0
1
2
3
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Square
Wave
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
100
R(t) (C/W)
10
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm
2
pad)
100
50% (DUTY CYCLE)
25%
10
R(t) (C/W)
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in
2
pad)
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
SCALE 4:1
E
q
DATE 10 MAY 2013
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
DIM
A
A1
b
c
D
E
L
H
E
q
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
D
1
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
TOP VIEW
q
A
END VIEW
A1
H
E
SIDE VIEW
2X
c
GENERIC
MARKING DIAGRAM*
XXXMG
G
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
L
2X
b
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
4.20
1.25
2X
2X
1.22
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11184D
SOD−123FL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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