Datasheet> 器件分类 > 分立半导体> 晶体管> MJE2360TDW

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MJE2360TDW: 产品描述0.5A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN; 产品类别分立半导体晶体管; 文件大小340KB，共59页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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MJE2360TDW概述

0.5A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE2360TDW规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ON Semiconductor(安森美)
零件包装代码	TO-220AB
包装说明	PLASTIC, TO-220AB, 3 PIN
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	350 V
配置	SINGLE
最小直流电流增益 (hFE)	15
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
标称过渡频率 (fT)	10 MHz

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon High-Voltage

Transistor

. . . useful for general–purpose, high voltage applications requiring high fT.

•

Collector–Emitter Sustaining Voltage —

VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc

•

DC Current Gain —

hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T

•

Current–Gain–Bandwidth Product —

fT = 10 MHz (Typ) @ IC = 50 mAdc

MJE2360T

MJE2361T

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

350 VOLTS

30 WATTS

PD, POWER DISSIPATION (WATTS)

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MAXIMUM RATINGS

Rating

Symbol

VCEO

VCB

VEB

Value

350

375

6.0

0.5

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

0.25

Total Power Dissipation @ TC = 25

Derate above 25

Operating and Storage Junction

Temperature Range

0.24

Watts

TJ, Tstg

– 65 to + 150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

4.167

C/W

5.0

120

100

TC, CASE TEMPERATURE (°C)

140

160

Figure 1. Power–Temperature Derating Curve

REV 1

3–626

Motorola Bipolar Power Transistor Device Data

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