TZX...
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm,
T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 10-Mar-97
1 (8)
TZX...
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
500
V
Ztn
– Relative Voltage Change
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
400
300
l
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
l
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0
60
120
180
240
95 9611
95 9599
T
j
– Junction Temperature (
°C
)
Figure 1. Thermal Resistance vs. Lead Length
Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 2. Total Power Dissipation vs. Ambient Temperature
1000
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
– Voltage Change ( mV )
T
j
= 25°C
100
150
V
R
= 2V
100
T
j
= 25°C
I
Z
=5mA
10
D
V
Z
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25
°
C
Figure 6. Diode Capacitance vs. Z–Voltage
TELEFUNKEN Semiconductors
Rev. A1, 10-Mar-97
5 (8)
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