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JANTX1N6632D

产品描述Zener Diode, 3.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小186KB,共26页
制造商Compensated Devices Inc
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JANTX1N6632D概述

Zener Diode, 3.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

JANTX1N6632D规格参数

参数名称属性值
包装说明HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Codeunknown
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码O-LALF-W2
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
参考标准MIL-19500/356H
标称参考电压3.3 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
最大电压容差1%
工作测试电流380 mA
Base Number Matches1

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INCH POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 February 2005.
MIL-PRF-19500/356H
24 November 2004
SUPERSEDING
MIL-PRF-19500/356G
5 September 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,
AND C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two
levels of product assurance for each unencapsulated device type die.
1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:
P
T
at
T
L
= +65°C
L = .375 inch
(9.53 mm)
1N4954
through
1N4996
P
T
at
T
L
= +25°C
L = .375 inch (9.53
mm)
1N5968,
1N5969,
1N6632 through
1N6637
P
T
at
T
EC
= +125°C
1N4954US
through
1N4996US
N5968US,
1N5969US,
1N6632US through
1N6637US
5 W (3)
T
J
and T
STG
Barometric pressure
reduced (high altitude
operation)
1N4954 through
1N4996
1N5968,
1N5969,
1N6632 through
1N6637
including US suffix
8 mHg
1N4954 through
1N4996
1N5968,
1N5969,
1N6632 through
1N6637
including US suffix
-65°C to +175°C
5 W (1)
5 W (2)
(1) Derate: See figure 4 herein.
(2) Derate: See figure 5 herein.
(3) Derate: See figures 5, 6 and 7 herein.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
..
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