LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTA144TWT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT–323 (SC–70)
•
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
1
BASE
R1
3
COLLECTOR
2
EMITTER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
−50
−50
−5
−100
200
150
−55
to
+150
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
LDTA144TWT1G
LDTA144TWT3G
Marking
6T
6T
R1 (K)
47
47
R2 (K)
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
−50
−50
−5
−
−
−
100
32.9
−
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
61.1
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
I
C
/I
B
=−5mA/−0.5mA
V
CE
=−5V,
I
C
=−1mA
−
V
CE
=−10V,
I
E
=5mA,
f=100MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTA144TWT1G
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=−5V
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=10
200
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
Ta=100°C
25°C
−40°C
−1m
−10µ −20µ −50µ −100µ −200µ −500µ −1m −2m
−5m −10m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs.collector
current
Fig.2 Collector-emitter saturation
voltage vs.collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA144TWT1G
SC−70 (SOT−323)
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1
XX
M
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
3/3
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