LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning and
AFC, general frequency control and tuning applications.They provide
solid–state reliability in replacement of mechanical tuning methods.
MMVL2101T1
30 VOLTS
VOLTAGEVARIABLE
CAPACITANCEDIODE
1
•
High Q
•
Controlled and Uniform Tuning Ratio
•
Standard Capacitance Tolerance – 10%
•
Complete Typical Design Curves
•
Device Marking: 4G
ORDERING INFORMATION
Device
MMVL2101T1
Package
SOD–323
Shipping
3000 / Tape & Reel
2
PLASTIC, CASE 477
SOD– 323
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V
R
I
F
Symbol
P
D
Rating
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Value
30
200
Max
200
1.57
635
150
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS
R
θJA
Thermal Resistance Junction to Ambient
T
J
, T
stg
Junction and Storage Temperature
*FR–4 Minimum Pad
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
µAdc)
Rev
erse Voltage Leakage Current
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
V
(BR)R
Min
30
Typ
—
Max
—
Unit
Vdc
I
R
TC
C
—
—
—
280
0.1
—
µAdc
ppm/°C
(V
R
= 25 Vdc, T
A
= 25°C)
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
C
t
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Device
MMVL2101T1
Min
6.1
Nom
6.8
Q, Figure of Merit
V
R
= 4.0 Vdc
f = 50 MHz
Min
2.5
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.7
Max
3.2
Max
7.5450
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0
MHz using a capacitance bridge
(Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
T
measured at 2.0
Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C
readings of an admittance bridge at the
specified frequency and substituting in the
following equations:
Q =2πfC/G
(Boonton Electronics Model 33AS8 or
equivalent). Use Lead Length = 1/16”.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc,
f = 1.0 MHz, T
A
= –65°C with C
T
at V
R
= 4.0 Vdc, f =
1.0 MHz, T
A
= +85°C in the following equation, which
defines TC
C
:
C
T
(+85°C) – C
T
(–65°C)
10
6
TC
C
=
•
85+65
C
T
(25°C)
Accuracy limited by measurement of C
T
to ±0.1 pF.
MMVL2101T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL2101T1
TYPICAL DEVICE CHARACTERISTICS
C
T
, DIODE CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
NORMALIZED DIODE CAPACITANCE
I
R
, REVERSE CURRENT (nA)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
Q, FIGURE OF MERIT
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
Q, FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 5. Figure of Merit versus Frequency
MMVL2101T1–2/2
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