INTEGRATED CIRCUITS
DATA SHEET
74AHC14; 74AHCT14
Hex inverting Schmitt trigger
Product specification
Supersedes data of 1999 Jan 11
File under Integrated Circuits, IC06
1999 Sep 27
Philips Semiconductors
Product specification
Hex inverting Schmitt trigger
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
•
Balanced propagation delays
•
Inputs accepts voltages higher than
V
CC
•
For AHC only:
operates with CMOS input levels
•
For AHCT only:
operates with TTL input levels
•
Specified from
−40
to +85 and +125
°C.
DESCRIPTION
The 74AHC/AHCT14 are high-speed
Si-gate CMOS devices and are pin
compatible with low power Schottky
TTL (LSTTL). They are specified in
compliance with JEDEC standard
No. 7A.
The 74AHC/AHCT14 provide six
inverting buffers with Schmitt-trigger
action. They are capable of
transforming slowly changing input
signals into sharply defined, jitter-free
output signals.
FUNCTION TABLE
See note 1.
INPUTS
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUTS
nY
H
L
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC14; 74AHCT14
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
PARAMETER
propagation delay
nA to nY
input capacitance
output capacitance
power dissipation
capacitance
C
L
= 50 pF;
f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC
C
L
= 15 pF;
V
CC
= 5 V
V
I
= V
CC
or GND
3.2
3.0
4.0
10
AHCT
4.0
3.0
4.0
12
ns
pF
pF
pF
UNIT
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PINNING
PIN
1, 3, 5, 9, 11 and 13
2, 4, 6, 8, 10 and 12
7
14
SYMBOL
1A to 6A
1Y to 6Y
GND
V
CC
DESCRIPTION
data inputs
data outputs
ground (0 V)
DC supply voltage
1999 Sep 27
2
Philips Semiconductors
Product specification
Hex inverting Schmitt trigger
RECOMMENDED OPERATING CONDITIONS
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient temperature
range
see DC and AC
characteristics per
device
CONDITIONS
MIN.
2.0
0
0
−40
−40
74AHC14; 74AHCT14
74AHCT
UNIT
TYP. MAX.
5.0
−
−
+25
+25
5.5
5.5
V
CC
+85
V
V
V
°C
TYP. MAX. MIN.
5.0
−
−
+25
+25
5.5
5.5
V
CC
+85
4.5
0
0
−40
+125
−40
+125
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP packages: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC V
CC
or GND current
storage temperature range
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
DC output source or sink current
−0.5
V < V
O
< V
CC
+ 0.5 V
+150
°C
1999 Sep 27
4
Philips Semiconductors
Product specification
Hex inverting Schmitt trigger
DC CHARACTERISTICS
74AHC14; 74AHCT14
Type 74AHC14
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
T+
positive going
threshold
V
CC
(V)
3.0
4.5
5.5
V
T−
negative going
threshold
3.0
4.5
5.5
V
H
hysteresis
(V
T+
−
V
T−
)
HIGH-level output V
I
= V
IH
or V
IL
;
voltage; all outputs I
O
=
−50 µA
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−8.0
mA
V
OL
LOW-level output V
I
= V
IH
or V
IL
;
voltage; all outputs I
O
= 50
µA
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 4 mA
V
I
= V
IH
or V
IL
;
I
O
= 8 mA
I
I
I
CC
C
I
input leakage
current
quiescent supply
current
input capacitance
V
I
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
3.0
4.5
5.5
V
OH
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
−
−
−
0.9
1.35
1.65
0.3
0.4
0.5
1.9
2.9
4.4
2.58
3.94
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2.0
3.0
4.5
−
−
0
0
0
−
−
−
−
3
25
T
amb
(°C)
−40
to +85
−
−
−
0.9
1.35
1.65
0.3
0.4
0.5
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
−40
to +125 UNIT
−
−
−
0.9
1.35
1.65
0.25
0.35
0.45
1.9
2.9
4.4
2.40
3.70
−
−
−
−
−
−
−
−
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.2
3.15
3.85
−
−
−
1.2
1.4
1.6
−
−
−
−
−
0.1
0.1
0.1
0.36
0.36
0.1
2.0
10
2.2
3.15
3.85
−
−
−
1.2
1.4
1.6
−
−
−
−
−
0.1
0.1
0.1
0.44
0.44
1.0
20
10
2.2
3.15
3.85
−
−
−
1.2
1.4
1.6
−
−
−
−
−
0.1
0.1
0.1
0.55
0.55
2.0
40
10
µA
µA
pF
V
V
V
V
V
V
V
1999 Sep 27
5
嵌入式系统
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