2N3498, 2N3499, 2N3500, 2N3501
NPN Medium Power Silicon Transistor
Rev. V3
Features
•
Available in JAN, JANTX, JANTXV and JANS per
MIL-PRF-19500/366
•
TO-39 (TO-205AD) and TO-5 Leaded Packages
•
2N3501 Available In UB package
•
Ideal for High Voltage Inductive Load Switching Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
I
C
= 10 mA dc
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
V
CB
= 100 V dc 2N3498, 2N3499
V
CB
= 150 V dc 2N3500, 2N3501
2N3501UB
V
CB
= 50 V dc 2N3498, 2N3499
V
CB
= 75 V dc 2N3500, 2N3501
2N3501UB
V
EB
= 6.0 V dc
V
EB
= 4.0 V dc
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
V
(BR)CEO
V dc
100
150
—
Collector
-
Base Cutoff Current
I
CBO1
µA dc
—
10
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
I
CBO2
I
EBO1
I
EBO2
nA dc
µA dc
nA dc
—
—
—
50
10
25
Collector
-
Emitter Saturation Voltage
Collector
-
Emitter Saturation Voltage
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
I
C
= 10 mA dc; I
B
= 1 mA dc
I
C
= 150 mA dc; I
B
= 15 mA dc
(2N3500, 2N3501, 2N3501B only)
I
C
= 300 mA dc; I
B
= 30 mA dc
(2N3498, 2N3499 only)
I
C
= 10 mA dc; I
B
= 1 mA dc
I
C
= 150 mA dc; I
B
= 15 mA dc
(2N3500, 2N3501, 2N3501B only)
I
C
= 300 mA dc; I
B
= 30 mA dc
(2N3498, 2N3499 only)
T
A
= +150
o
C
V
CB
= 50 V dc 2N3498, 2N3499
V
CB
= 75 V dc 2N3500, 2N3501
2N3501UB
T
A
=
-55
o
C
V
CE
= 10 V dc; I
C
= 150 mA dc
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
V
CE(SAT)1
V dc
V
CE(SAT)2
V dc
V
CE(SAT)3
V dc
V
BE(SAT)1
V dc
V
BE(SAT)2
V dc
V
BE(SAT)3
V dc
—
—
—
—
—
—
0.2
0.4
0.6
0.8
1.2
1.4
Collector
-
Base Cutoff Current
I
CBO3
µA dc
—
50
Forward Current Transfer Ratio
h
FE7
-
22
45
1
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for additional data sheets and product information.
For further information and support please visit:
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2N3498, 2N3499, 2N3500, 2N3501
NPN Medium Power Silicon Transistor
Rev. V3
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
V
CE
= 10 V dc; I
C
= 0.1 mA dc
2N3498, 2N3500
2N3499, 2N3501,2N3501 UB
V
CE
= 10 V dc; I
C
= 1.0 mA dc
2N3498, 2N3500
2N3499, 2N3501,2N3501 UB
V
CE
= 10 V dc; I
C
= 10 mA dc
2N3498, 2N3500
2N3499, 2N3501,2N3501 UB
V
CE
= 10 V dc; I
C
= 150 mA dc
2N3498, 2N3500
2N3499, 2N3501,2N3501 UB
V
CE
= 10 V dc; I
C
= 300 mA dc
2N3500
2N3501, 2N3501 UB
V
CE
= 10 V dc; I
C
= 500 mA dc
2N3498
2N3499
Symbol Units
Min.
Max.
Forward Current Transfer Ratio
h
FE1
-
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Forward Current Transfer Ratio
h
FE2
-
Forward Current Transfer Ratio
h
FE3
-
Forward Current Transfer Ratio
h
FE4
-
Forward Current Transfer Ratio
h
FE5
-
Forward Current Transfer Ratio
h
FE6
-
Dynamic Characteristics
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short-Circuit Forward Current
Transfer Ratio
I
C
= 20 mA dc; V
CE
= 20 V dc; f = 100 mHz | h
fe
|
V
CE
= 10 V dc; I
C
= 10 mA dc; f = 1 kHz
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
V
CB
= 10 V dc; I
E
= 0; 100 kHz <f< 1 MHz
2N3489,2N3499
2N3500, 2N3501
V
EB
= 0.5 V dc; I
C
= 0; 100 kHz <f< 1 MHz
-
1.5
8
h
fe
35
75
300
375
Open Circuit Output Capacitance
C
obo
pF
—
10
8
80
Input Capacitance (Output Open Circuited)
Switching Characteristics
Turn-On Time
Turn-Off Time
C
ibo
pF
I
C
= 150 mA dc; I
B1
= 15 mA dc; V
EB
= 5 V dc
I
C
= 150 mA dc; I
B1
= I
B2
= 15 mA dc
t
on
t
off
ns
ns
—
—
115
1150
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3498, 2N3499, 2N3500, 2N3501
NPN Medium Power Silicon Transistor
Rev. V3
Absolute Maximum Ratings
Ratings
Collector
-
Emitter Voltage
2N3498 2N3499, L, U4
2N3500 2N3501, L, U4, UB
Collector
-
Base Voltage
2N3498 2N3499, L, U4
2N3500 2N3501, L, U4, UB
Emitter
-
Base Voltage
Collector Current
2N3498 2N3499, L, U4
2N3500 2N3501, L, U4, UB
Total Power Dissipation
@ T
A
= +25°C
2
@ T
C
= +25°C
3
Operating & Storage Temperature Range
Symbol
V
CEO
Value
100 V dc
150 V dc
100 V dc
150 V dc
6.0 V dc
500 mA dc
300 mA dc
1.0 W
6.0 W
-65°C
to +200°C
V
CBO
V
EBO
I
C
P
T
T
OP
, T
STG
Thermal Characteristics
Types
P
T
T
A
=
+25
o
C
(1)
W
2N3498,L
2N3498U4
2N3499,L
2N3499U4
2N3500,L
2N3500U4
2N3501,L
2N3501U4
2N3501UB
1
1
1
1
1
1
1
1
1
P
T
T
C
=
+25
o
C
(1)
W
5
4
5
4
5
4
5
4
.5
P
T
T
SP
=
+25
o
C
(1)
W
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1.5
o
R
ᶿJA
R
ᶿJC
R
ᶿJC
Kovar
R
ᶿJSP
V
CBO
V
CEO
V
EBO
I
C
T
J
and
T
STG
-65
to +200
C/W
o
C/W
30
15
30
15
30
15
30
15
N/A
o
C/W
o
C/W
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
90
V dc
100
100
100
100
150
150
150
150
150
V dc
100
100
100
100
150
150
150
150
150
V dc
6
6
6
6
6
6
6
6
6
mA dc
500
500
500
500
300
300
500
300
300
o
C
175
175
175
175
175
175
175
175
350
34.9
34.9
34.9
34.9
(
1) Derating curves 6, 7, 8, 9 and 10 per MIL-PRF-19500/366
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3498, 2N3499, 2N3500, 2N3501
NPN Medium Power Silicon Transistor
Rev. V3
Safe Operating Area
DC Tests:
Test 1:
T
C
= +25°C; I Cycle; tr ≥ 10 ns; t =1s
V
CE
= 10 V dc; I
C
= 500 mA dc
2N3498, 2N3499
V
CE
= 16.67 V dc; I
C
= 300 mA dc 2N3500, 2N3501
V
CE
= 10 V dc; I
C
= 113mA dc
2N3501UB
V
CE
= 50 V dc; I
C
= 100 mA dc
V
CE
= 50 V dc; I
C
= 23 mA dc
V
CE
= 80 V dc; I
C
= 40 mA dc
V
CE
= 80 V dc; I
C
= 14 mA dc
T
A
= +25
o
C
I
B
= 85 mA dc; I
C
= 500 mA dc
I
B
= 50 mA dc; I
C
= 300 mA dc
2N3498, 2N3499, 2N3500, 2N3501
2N3501UB
2N3498, 2N3499, 2N3500, 2N3501
2N3501UB
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
Test 2:
Test 3:
Safe operating area
(clamped switching)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3498, 2N3499, 2N3500, 2N3501
NPN Medium Power Silicon Transistor
Rev. V3
Outline Drawing
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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