DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D054
BZV55 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 21
2002 Feb 28
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 500 mW
•
Two tolerance series:
±2%,
and approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24
±2%
(BZV55-B) and
approx.
±5%
(BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
k
BZV55 series
columns
a
MAM215
The cathode is indicated by a yellow band.
Fig.1
Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
≤
50
°C;
note 1
tie-point
≤
50
°C;
note 1
CONDITIONS
−
MIN.
MAX.
250
UNIT
mA
see Tables 1 and 2 A
−
−
400
500
40
+200
+200
mW
mW
W
°C
°C
t
p
= 100
µs;
square wave;
−
T
j
= 25
°C
prior to surge; see Fig.3
−65
−65
2002 Feb 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total BZV55-B and BZV55-C series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
CONDITIONS
I
F
= 10 mA; see Fig.4
BZV55 series
MAX.
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
UNIT
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
2002 Feb 28
3
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Table 1
Per type, BZV55-B/C2V4 to BZV55-B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
4
4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol. approx.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 28
2002 Feb 28
Philips Semiconductors
Philips Semiconductors
Voltage regulator diodes
Voltage regulator diodes
BZV55-
Bxxx
Cxxx
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
12.3
14.1
15.9
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
15.6
17.6
19.6
MAX.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
MAX.
BZV55 series
BZV55 series
Product specification
Product specification
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Table 2
Per type, BZV55-B/C27 to BZV55-B/C75
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
5
5
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MAX.
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
Tol. approx.
±5%
(C)
MIN.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 28
2002 Feb 28
Philips Semiconductors
Philips Semiconductors
Voltage regulator diodes
Voltage regulator diodes
BZV55-
Bxxx
Cxxx
at I
Ztest
= 0.5 mA at I
Ztest
= 2 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
MAX.
300
300
325
350
350
375
375
400
425
450
475
500
TYP.
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
80
80
80
90
130
150
170
180
200
215
240
255
MIN.
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
TYP.
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
MAX.
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
MAX.
BZV55 series
BZV55 series
Product specification
Product specification
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