128KX36 LATE-WRITE SRAM, 4ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | BGA |
| 包装说明 | BGA, |
| 针数 | 119 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 4 ns |
| JESD-30 代码 | R-PBGA-B119 |
| JESD-609代码 | e0 |
| 长度 | 22 mm |
| 内存密度 | 4718592 bit |
| 内存集成电路类型 | LATE-WRITE SRAM |
| 内存宽度 | 36 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 119 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128KX36 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.4 mm |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3.15 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | BICMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL |
| 端子节距 | 1.27 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 14 mm |
| Base Number Matches | 1 |
| MCM69R738AZP8R | MCM69R738AZP8 | MCM69R738AZP5 | MCM69R738AZP6R | MCM69R738AZP7R | MCM69R738AZP7 | MCM69R738AZP6 | |
|---|---|---|---|---|---|---|---|
| 描述 | 128KX36 LATE-WRITE SRAM, 4ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 4ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 2.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 3ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 3.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 3.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | 128KX36 LATE-WRITE SRAM, 3ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, |
| 针数 | 119 | 119 | 119 | 119 | 119 | 119 | 119 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 4 ns | 4 ns | 2.5 ns | 3 ns | 3.5 ns | 3.5 ns | 3 ns |
| JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm |
| 内存密度 | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit |
| 内存集成电路类型 | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM | LATE-WRITE SRAM |
| 内存宽度 | 36 | 36 | 36 | 36 | 36 | 36 | 36 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 119 | 119 | 119 | 119 | 119 | 119 | 119 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 128KX36 | 128KX36 | 128KX36 | 128KX36 | 128KX36 | 128KX36 | 128KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.4 mm | 2.4 mm | 2.4 mm | 2.4 mm | 2.4 mm | 2.4 mm | 2.4 mm |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
模拟与混合信号
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嵌入式系统
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DSP 与 ARM 处理器
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