LNTR4003NLT1G
S-LNTR4003NLT1G
30 V, 0.56 A, Single, N−Channel,
Gate ESD Protection, SOT-23
1. FEATURES
●
●
●
●
●
Low gate voltage threshold(VGS(th))to facilitate drive circuit design
Low gate charge for fast switching
ESD protected gate
Minimum breakdown voltage rating of 30 V
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
SOT23(TO-236)
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2. APPLICATIONS
Level shifters
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Level switches
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●
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Low side load switches
Portable applications
3. DEVICE MARKING AND ORDERING INFORMATION
Device
LNTR4003NLT1G
LNTR4003NLT3G
Marking
TR8
TR8
Shipping
3000/Tape&Reel
10000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25º
C)
Parameter
Drain–Source Voltage
Gate–to–Source Voltage – Continuous
Continuous Drain
TA = 25°
C
Current (Note 1)
Steady State
TA = 85°
C
Continuous Drain
Current (Note 1) t<10s
TA = 25°
C
TA = 85°
C
IDM
IS
PD
0.69
0.83
TJ,Tstg
TL
260
−55∼+150
ºC
ºC
Symbol
VDSS
VGS
ID
Limits
30
±20
0.5
0.37
0.56
0.4
1.7
1
A
A
W
Unit
V
V
A
Pulsed Drain Current(tp=10μs)
Continuous Source Current (Body Diode)
Maximum Power Dissipation(Note 1)
Steady State
t<5s
Junction and Storage temperature
Maximum Temperature for Soldering
Purposes
Leshan Radio Company, LTD.
Rev.B Mar 2016
1/5
LNTR4003NLT1G, S-LNTR4003NLT1G
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23
5. THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction–to–Ambient
Steady State(Note 1)
t < 10s(Note 1)
Symbol
RΘJA
180
150
Limits
Unit
º
C/W
6. ELECTRICAL CHARACTERISTICS (Ta= 25
º
)
C
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100μAdc)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
(VDS=30V, VGS=0V)
Gate–Body Leakage Current, Forward
(VDS = 0 V, VGS = ±10 V)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250μAdc)
Negative Threshold Temperature Coefficient
Static Drain–Source On–State Resistance
(VGS = 4.0 V, ID = 10 mA)
(VGS = 2.5 V, ID = 10 mA)
Forward Transconductance
(VDS = 3.0 V, ID = 10 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= 5 V)
Output Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= 5 V)
Reverse Transfer Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= 5 V)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
(VGS = 0 Vdc, ISD = 10 mAdc)
Reverse Recovery Time
(VGS = 0 V,dIS/dt = 8A/μs,IS = 10 mA )
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2.Pulse Test: Pulse Width
≤300
μs, Duty Cycle
≤2.0%.
trr
-
14
-
VSD
-
0.65
0.7
ns
V
(VGS = 4.5 V, VDD = 5.0
V,
ID = 0.1 A, RG = 50Ω)
td(on)
tr
td(off)
tf
-
-
-
-
16.7
47.9
65.1
64.2
-
-
-
-
ns
Ciss
Coss
Crss
pF
-
-
-
41
12
8.1
-
pF
-
pF
-
gfs
VGS(th)
VGS(TH)/TJ
RDS(on)
Vdc
0.8
-
-
-
-
-
3.4
1
1.5
0.33
1.6
-
1.5
2
S
-
mV/°
C
Ω
Symbol
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
Min.
30
-
-
-
Typ.
-
40
-
-
Max.
-
mV/°
C
-
μAdc
1.0
μAdc
±1.0
Unit
Vdc
Leshan Radio Company, LTD.
Rev.B Mar 2016
2/5
LNTR4003NLT1G, S-LNTR4003NLT1G
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23
7.ELRCTRICAL CHARACTERISTICS CURVES
2
VGS=9V,10V
VGS=8V
ID,Drain Current(A)
ID,Drain Current(A)
1.5
VGS=4V
2
25℃
VGS=4.5V
2.5
VDS=10V
-55℃
VGS=3.5V
1
VGS=7V
VGS=6V
VGS=5V
0.5
VGS=2.5V
1.5
1
150℃
0.5
0
0
0.5
1
1.5
VDS,Drain-to-Source Voltage(V)
2
0
0
2
4
VGS,Gate-to-Source Votalge(V)
6
On-Region Characteristics
Transfer Characteristics
10
ID=0.2A
8
RDS(on),ON Resistance(Ω)
1
125℃
RDS(on),ON Resistance(Ω)
0.8
6
0.6
25℃
4
0.4
-55℃
0.2
2
0
2
2.4
2.8
3.2
3.6
VGS,Gate-to-Source(V)
4
0
0
0.2
0.4
ID，Drain Current(A)
0.6
RDS(on) vs. VGS
RDS(on) vs. ID
Leshan Radio Company, LTD.
Rev.B Mar 2016
3/5
LNTR4003NLT1G, S-LNTR4003NLT1G
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23
7.ELRCTRICAL CHARACTERISTICS CURVES（Con.）
1.8
IDSS,Zero Gate Voltage Drain Current(nA)
1000
150℃
1.6
RDS(on) NORMALIZED
1.4
1.2
100
125℃
1
0.8
0.6
-50
-25
0
25
50
75 100
T,temperature(℃)
125
150
10
0
5
10
15
20
25
VDS,Drain -to-Source Voltage(V)
30
RDS(on) vs. Temperature
IDSS vs. VDS
60
1
Ta=25℃
f=1MHz
150℃
IDR,Reverse Drain Current(A)
50
Ciss
C, Capacitance (pF)
40
0.1
25℃
30
Coss
Crss
20
0.01
10
0
0
2
4
6
8
VDS,Drain-to-Source Voltage (V)
10
0.001
0.2
0.4
0.6
0.8
VSD,Source-Drain Voltage(V)
1
Capacitance Variation
Diode Forward Characteristics
Leshan Radio Company, LTD.
Rev.B Mar 2016
4/5
LNTR4003NLT1G, S-LNTR4003NLT1G
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23
8.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN
A 0.89
A1
b
c
D
E
e
L
L1
H
E
θ
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1
0.06
0.44
0.13
2.9
1.3
1.9
0.2
0.54
2.4
---
MAX
1.11
0.1
0.5
0.18
3.04
1.4
2.04
0.3
0.69
2.64
10°
MIN
0.035
NOM
0.04
MAX
0.044
0.02
0.12
0.001 0.002 0.004
0.015 0.018
0.11
0.07
0.114
0.003 0.005 0.007
0.047 0.051 0.055
0.075 0.081
0.004 0.008 0.012
0.014 0.021 0.029
0.083 0.094 0.104
0°
---
10°
9.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.B Mar 2016
5/5
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