LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTC143TLT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT-23
•
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Limits
50
50
5
100
200
150
−55
to
+150
1
BASE
Unit
V
V
mA
mW
°C
°C
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC143TLT1G
LDTC143TLT3G
Marking
A8F
A8F
R1 (K)
4.7
4.7
R2 (K)
-
-
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
50
50
5
−
−
−
100
3.29
−
Typ.
−
−
−
−
−
−
250
4.7
250
Max.
−
−
−
0.5
0.5
0.3
600
6.11
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=5mA/0.25mA
I
C
=1mA,
V
CE
=5V
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
∗
Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTC143TLT1G
Electrical characteristic curves
1k
500
V
CE
=
5V
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m
10m 20m
50m 100m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m
2m
5m
10m 20m
50m 100m
Ta=100°C
25°C
−40°C
l
C
/l
B
=20
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC143TLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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