LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for
general frequency controland tuning applications. It provides
solid–state reliability in replacement of mechanical tuning
methods.
•
High Q with Guaranteed Minimum Values at VHF Frequencies
•
Controlled and Uniform Tuning Ratio
3
MMBV3102LT1
22 pF(Nominal) 30Volts
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE
8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
30
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10µAdc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
Symbol
V
(BR)R
I
R
T
CC
Min
30
—
—
Typ
—
—
300
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
C
T
Diode Capacitance
V
R
=3.0Vdc,f=1.0MHz
pF
Device Type
MMBV3102LT1
Min
20
Q,Figure of Merit
V
R
=3.0Vdc
f=50MHz
C
R
,Capacitance Ratio
C
3
/ C
25
f=1.0MHz
Min
4.5
Nom
22
Max
25
Min
200
Typ
4.8
MMBV3102LT1–1/2
LESHAN RADIO COMPANY, LTD.
MMBV3102LT1
TYPICAL CHARACTERISTICS
40
20
10
C
T
, DIODE CAPACITANCE (pF)
36
T
A
= 25°C
f = 50MHz
Q , FIGURE OF MERIT
32
28
24
20
16
12
8.0
4.0
0
0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0
3.0
6.0
9.0
12
15
18
21
24
27
30
f = 1.0MHz
T
A
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( GHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
C
T
,DIODE CAPACITANCE(NORMALIZED)
100
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50
–25
0
+25
+50
+75
+100
+125
I
R
, REVERSE CURRENT ( nA)
V
R
= 3.0Vdc
f = 1.0MHz
10
V
R
= 20Vdc
1.0
0.1
0.01
0.001
-60
-20
0
+20
+60
+100
+140
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
NOTES ON TESTING ANG SPECIFICATIONS
1. C
R
is the ratio of C
T
measured at 3.0 Vdc divided by C
T
measured at 25 Vdc.
MMBV3102LT1–2/2
Microchip MCU
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