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MMBV3102LT1

产品描述UHF BAND, 22pF, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
产品类别分立半导体    二极管   
文件大小85KB,共6页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MMBV3102LT1概述

UHF BAND, 22pF, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB

MMBV3102LT1规格参数

参数名称属性值
包装说明R-PDSO-G3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性HIGH Q
最小击穿电压30 V
配置SINGLE
最小二极管电容比4.5
标称二极管电容22 pF
二极管元件材料SILICON
二极管类型VARIABLE CAPACITANCE DIODE
频带ULTRA HIGH FREQUENCY
JEDEC-95代码TO-236AB
JESD-30 代码R-PDSO-G3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大功率耗散0.225 W
认证状态Not Qualified
最小质量因数200
最大重复峰值反向电压30 V
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
变容二极管分类HYPERABRUPT
Base Number Matches1

文档预览

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBV3102LT1/D
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control
and tuning applications. It provides solid–state reliability in replacement of mechanical
tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
MMBV3102LT1
Motorola Preferred Device
22 pF (Nominal)
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
3
Cathode
1
Anode
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
TJ
Tstg
Value
30
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV3102LT1 = M4C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
V(BR)R
IR
TCC
Min
30
Typ
300
Max
0.1
Unit
Vdc
µAdc
ppm/°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MMBV3102LT1
Min
20
Nom
22
Max
25
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min
4.5
Typ
4.8
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

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