LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance
with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
(3)
(2)
(1)
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
6
5
4
1
2
3
SC-88
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
(4)
(5)
(6)
Q
1
Q
2
ORDERING INFORMATION
Device
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
LMBT2222ADW1T3G
S-LMBT2222ADW1T3G
Marking
XX
XX
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
–
–
I
EBO
I
BL
–
–
0.01
10
100
20
nAdc
nAdc
40
75
6.0
–
–
–
–
10
Vdc
Vdc
Vdc
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= –55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 2)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 2)
Collector–Emitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base–Emitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
h
FE
35
50
75
35
100
50
40
V
CE(sat)
–
–
V
BE(sat)
0.6
–
1.2
2.0
0.3
1.0
Vdc
–
–
–
–
300
–
–
Vdc
–
Rev.O 2/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 3)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kΩ, f = 1.0 kHz)
f
T
C
obo
C
ibo
h
ie
2.0
0.25
h
re
–
–
h
fe
50
75
h
oe
5.0
25
rb, C
c
–
NF
–
4.0
150
dB
35
200
ps
300
375
mmhos
8.0
4.0
–
8.0
1.25
X 10
–4
300
–
–
–
8.0
25
MHz
pF
pF
kΩ
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= –0.5 Vdc,
0.5
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
–
–
–
–
10
25
225
60
ns
ns
3. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Rev.O 3/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
1000
700
500
hFE , DC CURRENT GAIN
300
200
25°C
100
70
50
30
20
10
0.1
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
T
J
= 125°C
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
0.6
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 2. Collector Saturation Region
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
500
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
300
500
t′
s
= t
s
- 1/8 t
f
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
Rev.O 4/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
10
8.0
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 150
W
500
mA,
R
S
= 200
W
100
mA,
R
S
= 2.0 kW
50
mA,
R
S
= 4.0 kW
R
S
= OPTIMUM
R
S
=
SOURCE
R
S
=
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= 50
mA
100
mA
500
mA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 5. Frequency Effects
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 6. Source Resistance Effects
500
V
CE
= 20 V
T
J
= 25°C
300
200
30
20
CAPACITANCE (pF)
C
eb
10
7.0
5.0
C
cb
3.0
2.0
0.1
100
70
50
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
Figure 7. Capacitances
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 8. Current–Gain Bandwidth Product
I
C
/I
B
= 10
−55°C
25°C
150°C
0.1
−55°C
25°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Rev.O 5/7
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