电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RD20ESAB3

产品描述Zener Diode, 19.985V V(Z), 2.33%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小106KB,共7页
制造商NEC(日电)
下载文档 详细参数 全文预览

RD20ESAB3概述

Zener Diode, 19.985V V(Z), 2.33%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2

RD20ESAB3规格参数

参数名称属性值
包装说明O-LALF-W2
Reach Compliance Codeunknown
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-34
JESD-30 代码O-LALF-W2
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散0.4 W
认证状态Not Qualified
标称参考电压19.99 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
最大电压容差2.33%
工作测试电流5 mA
Base Number Matches1

文档预览

下载PDF文档
DATA SHEET
ZENER DIODES
RD2.0ES to RD39ES
400 mW DHD ZENER DIODE
(DO-34)
DESCRIPTION
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34
Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
PACKAGE DIMENSIONS
(in millimeters)
φ
0.4
FEATURES
• DO-34 Glass sealed package
This diode can be inserted into a PC board with a shorter pitch (5 mm)
5 mm
Cathode
indication
25 MIN.
φ
2.0 MAX.
• DHD (Double Heatsink Diode) construction
• V
Z
Applied E24 standard
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied
for orders for suffix "AB".
DO-34 (JEDEC)
Marking color: Black
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Forward Current
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
I
F
P
P
RSM
T
j
T
stg
150 mA
400 mW
100 W (t = 10
µ
s)
175°C
–65 to +175°C
to see Fig. 6
to see Fig. 10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13935EJ7V0DS00 (7th edition)
Date Published April 2003 N CP(K)
Printed in Japan
c
25 MIN.
• Planar process
2.4 MAX.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1271  1519  2597  2079  388  23  15  7  10  24 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved