Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> TZ425N12KOF

TZ425N12KOF: 产品描述Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-4; 产品类别模拟混合信号IC 触发装置; 文件大小454KB，共13页; 制造商EUPEC [eupec GmbH]

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TZ425N12KOF概述

Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-4

TZ425N12KOF规格参数

参数名称	属性值
包装说明	MODULE-4
Reach Compliance Code	unknown
外壳连接	ISOLATED
标称电路换相断开时间	250 µs
配置	SINGLE
关态电压最小值的临界上升速率	1000 V/us
最大直流栅极触发电流	250 mA
快速连接描述	G-GR
螺丝端子的描述	A-K
JESD-30 代码	R-XXFM-X4
通态非重复峰值电流	13000 A
元件数量	1
端子数量	4
最大通态电流	425000 A
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
认证状态	Not Qualified
最大均方根通态电流	800 A
断态重复峰值电压	1200 V
重复峰值反向电压	1200 V
表面贴装	NO
端子形式	UNSPECIFIED
端子位置	UNSPECIFIED
触发设备类型	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TZ425N

Kenndaten

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 74°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6 letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

1200

1600

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1200

1600

1300

1700

1400 V

1800 V

1400 V

1800 V

1500 V

1900 V

800 A

425 A

510 A

14500 A

12500 A

1051000 A²s

781000 A²s

120 A/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 1500 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

1,50 V

0,9 V

0,3 mΩ

max.

250 mA

1,5 V

10 mA

5 mA

0,2 V

300 mA

1500 mA

80 mA

4 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

1800 auf Anfrage/ 1800V on request

prepared by: C.Drilling

approved by: M.Leifeld

date of publication:

revision:

11.03.04

BIP AC / 2004-03-11; C. Drilling

A 09/04

Seite/page

1/12

TZ425N12KOF相似产品对比

	TZ425N12KOF	TZ425N16KOF	TZ425N14KOF	TZ425N18KOF
描述	Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-4	Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-4	Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-4	Silicon Controlled Rectifier, 800A I(T)RMS, 425000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-4
包装说明	MODULE-4	MODULE-4	MODULE-4	MODULE-4
Reach Compliance Code	unknown	unknown	unknown	unknown
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
最大直流栅极触发电流	250 mA	250 mA	250 mA	250 mA
快速连接描述	G-GR	G-GR	G-GR	G-GR
螺丝端子的描述	A-K	A-K	A-K	A-K
JESD-30 代码	R-XXFM-X4	R-XXFM-X4	R-XXFM-X4	R-XXFM-X4
通态非重复峰值电流	13000 A	13000 A	13000 A	12000 A
元件数量	1	1	1	1
端子数量	4	4	4	4
最大通态电流	425000 A	425000 A	425000 A	425000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	800 A	800 A	800 A	800 A
断态重复峰值电压	1200 V	1600 V	1400 V	1800 V
重复峰值反向电压	1200 V	1600 V	1400 V	1800 V
表面贴装	NO	NO	NO	NO
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
触发设备类型	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1
标称电路换相断开时间	250 µs	250 µs	250 µs	-
关态电压最小值的临界上升速率	1000 V/us	1000 V/us	1000 V/us	-
最低工作温度	-40 °C	-40 °C	-40 °C	-

TZ425N12KOF

TZ425N12KOF在线购买

TZ425N12KOF概述

TZ425N12KOF规格参数

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