MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166W/D
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
•
Push–Pull Configuration Reduces Even Numbered Harmonics
•
Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
•
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
•
Low Crss — 4.5 pF @ VDS = 28 Volts
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
1
3
5
4
FLANGE
2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
40
8.0
175
1.0
– 65 to +150
200
Unit
Vdc
Vdc
Adc
ADC
Watts
°C/W
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θJC
1.0
°C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF166W
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 5.0 mA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
IDSS
—
IGSS
—
—
1.0
—
1.0
µA
—
—
mA
Vdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS= 10 Vdc, ID = 25 mA)
Forward Transconductance
(VDS= 10 Vdc, ID = 1.5 A)
VGS(th)
1.0
gfs
600
800
—
3.0
6.0
mS
Vdc
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Output Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
4.5
—
35
—
pF
30
—
pF
pF
FUNCTIONAL CHARACTERISTICS
(2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)
Load VSWR = 30:1, All phase angles at frequency of test
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
Gps
11
η
45
Ψ
No Degradation in Output Power
50
—
13
—
%
dB
MRF166W
2
MOTOROLA RF DEVICE DATA
B
R7
A
R2
R1 C14
D1
C22
C15
RFC2
A
T1
C2
RF INPUT
C3
C21
Z2 L1
C23
C4
Z1 L2
Z4
Z3
L3
C5
Z6
L4
R5
R6
C11
A
C20
C12
RFC3
B
C19
Z9
Z10
C9
Z5
C13
R4
R3
Z7
D.U.T.
C6
C7
C10
Z8
C8
T2
RFC1
C16
VDD 28 V
+
C17 + C18 Vdc
–
–
RF OUTPUT
C1
L3, L4
0.065″
L1, L2
0.116″
0.265″
0.455″
C1, C2, C8, C9,
C12, C13, C15
C3
C4
C5
C6
C7
C10, C11, C14, C19,
C20, C21, C22
C16, C17
C18
C23
D1
L1, L2
L3, L4
270 pF, Chip Cap
5.6 pF, Chip Cap
20 pF, Chip Cap
0 – 20 pF, Johanson*
8.2 pF, Chip Cap
15 pF, Chip Cap
0.01
µF
680 pF, Feedthru
10
µF,
50 V
0 – 10 pF, Johanson*
IN5343 – Motorola Zener
Hair Pin Inductor #18 AWG,
0.065 W x 0.265 H
Hair Pin Inductor #18 AWG,
0.116 W x 0.445 H
RFC1
RFC2, RFC3
R1
R2
R3, R6
R4 R5
R7
T1, T2
Z1, Z2
Z3, Z4
Z5, Z6
Z7, Z9
Z8, Z10
Ferroxcube VK–200–19/4B
10T, ID = 1/4″, 18 AWG
10 kΩ, 10T
9.2 kΩ, 1/2 W
330
Ω,
1.0 W
520
Ω,
1/4 W
1.5 kΩ, 1/2 W
Balun 2.0″, 50
Ω
Semi–Rigid Coax
0.120 x 0.467″
0.120 x 0.55″ *
0.120 x 0.49″
0.120 x 0.85″
0.120 x 0.6″ for C6
Board Material – Teflon
®
Fiberglass
Dielectric Thickness = 0.030″,
ε
r = 2.55 Copper Clad, 2.0 oz. Copper
* C4, C5 Center of Z3 and Z4
Figure 1. MRF166 400 MHz Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF166W
3
50
45
Pout , OUTPUT POWER (WATTS)
40
35
30
25
20
15
10
5
0
0
f = 175 MHz
Pout , OUTPUT POWER (WATTS)
400 MHz
500 MHz
45
40
35
30
25
20
15
10
5
4
0
12
14
f = 400 MHz
IDQ = 100 mA
Pin = 3.0 W
2.0 W
1.0 W
0.5 W
VDD = 28 Vdc
IDQ = 200 mA
1
2
3
Pin, INPUT POWER (WATTS)
16
18
20
22
24
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
26
28
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Voltage
40
Pout , OUTPUT POWER (WATTS)
35
30
25
20
15
10
5
0
–10 – 9 – 8
–7 – 6 – 5 – 4 – 3 – 2 –1 0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
1
2
3
f = 400 MHz
TYPICAL DEVICE SHOWN,
VGS(th) = 3.0 V
VDD = 28 Vdc
IDQ = 100 mA
C, CAPACITANCE (pF)
100
90
80
70
60
50
40
30
20
10
0
0
4
Crss
8
12
16
20
24
28
Ciss
Coss
VGS = 0 V
f = 1.0 MHz
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
Figure 5. Capacitance versus Voltage
MRF166W
4
MOTOROLA RF DEVICE DATA
Zin
400
ZOL*
f = 500 MHz
f = 500 MHz
400
175
175
Zo = 50
Ω
VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W
f
MHz
175
400
500
Zin
Ohms
3.7 – j 22.4
3.6 – j 10.99
2.6 – j 3.2
ZOL*
Ohms
15.2 – j 16.6
10.3 – j 7.99
10.2 + j 0.5
NOTE: Input and output impedance values given are measured from gate to
gate and drain to drain respectively.
ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
Table 1. Input and Output Impedances
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA
MRF166W
5
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