INCH–POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 21 August 2013.
MIL–PRF–19500/581C
21 February 2013
SUPERSEDING
MIL–PRF–19500/581B
10 March 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
TYPES 2N4237, 2N4238, AND 2N4239, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL–PRF–19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, amplifier transistors. Three
levels of product assurance are provided for each device type as specified in
MIL–PRF–19500.
1.2 Physical dimensions. The device package style is TO–205AD (formerly TO–39) in accordance with
figure 1.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
P
T
T
A
= +25°C
(1)
V
CEO
I
C
T
J
and T
STG
P
T
T
C
= +25°C
(2)
R
θ
JA
R
θ
JC
V
CBO
V
EBO
I
B
W
2N4237
2N4238
2N4239
1.0
1.0
1.0
W
6.0
6.0
6.0
°C/W
175
175
175
°C/W
18
18
18
V dc
50
80
100
V dc
40
60
80
V dc
6.0
6.0
6.0
A dc
1.0
1.0
1.0
A dc
0.5
0.5
0.5
°C
–65 to +200
(1) See
figure 2.
(2) See
figure 3.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL–PRF–19500/581C
1.4 Primary electrical characteristics. Unless otherwise specified, at T
A
= +25°C.
h
FE
at V
CE
= 1.0 V dc (1)
Limits
h
FE1
I
C
= 100 mA
dc
h
FE2
I
C
= 250
mA
dc
h
fe
f = 10 MHz
V
CE
= 10 V dc
I
C
= 100 mA dc
h
FE3
I
C
= 500 mA
dc
I
C
= 1.0 A dc I
C
= 1.0 A dc
V
CB
= 10 V dc I
B
= 0.1 A dc I
B
= 0.1 A dc
I
C
= 0
C
obo
f = 1.0 MHz
V
CE(sat)2
1/
V
BE(sat)2
1/
Min
Max
30
30
150
30
pF
3.0
100
0.6
V dc
1.5
(1) Pulsed see
4.5.1.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3,
4,
or
5
of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3,
4,
or
5
of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL–PRF–19500
–
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL–STD–750
–
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111–5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL–PRF–19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see
4.2
and
6.3).
2
MIL–PRF–19500/581C
Dimensions
Ltr
Inches
Min
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
P
Q
R
α
Notes
.250
.029
.028
.100
.050
.010
45° TP
1, 2, 8, 9
.045
.034
.305
.240
.335
Max
.355
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
9.02
6.60
9.40
3
4
4
4
4
4
1.14
0.86
5
6
7
1.27
0.25
45° TP
8
9
3
Notes
.200 TP
.016
.500
.016
.021
.750
.019
.050
5.08TP
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
0.74
0.71
2.54
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Lead designation shall be as follows: Terminal 1 is the emitter, terminal 2 is the base, and terminal 3 is the
collector. Lead number three is electrically connected to case.
3. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane
shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by
direct methods or by gauge.
4. Dimension LD applies between L
1
and L
2
. Dimension LD applies between dimension L
2
and LL minimum.
5. Dimension TL is measured from dimension HD maximum.
6. Beyond dimension r maximum, dimension TW shall be held for a minimum length of .011 inch (0.28 mm).
7. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for
automatic handling.
8. Details of outline in this zone are optional.
9. Dimension r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions (TO–205AD formerly TO–39).
3
MIL–PRF–19500/581C
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in
MIL–PRF–19500.
R
θ
JA
R
θ
JC
Thermal resistance junction to ambient.
Thermal resistance junction to case.
3.4 Interface and physical dimensions. The interface requirements and physical dimensions shall be as specified
in
MIL–PRF–19500
and on
figure 1
(TO–205AD, formerly TO-39) herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with
MIL–STD–750,
MIL–PRF–19500,
and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition
document (see
6.2).
3.4.2 Polarity. The identification of terminals of the device package shall be as shown on
figure 1.
Terminal 1
shall be connected to the emitter, terminal 2 shall be connected to the base, and terminal 3 shall be connected to the
collector. The collector shall be electrically connected to the case.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in
table I
herein.
3.7 Marking. Marking shall be in accordance with
MIL–PRF–19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see
4.3).
Conformance inspection (see
4.4
and
tables I
and
II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with
MIL–PRF–19500
and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II
tests, the tests specified in
table II
herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4
MIL–PRF–19500/581C
4.3 Screening (quality levels JANTX and JANTXV only). Screening shall be in accordance with table E–IV of
MIL–PRF–19500,
and as specified herein. The following measurements shall be made in accordance with
table I
herein. Devices that exceed the limits of
table I
herein shall not be acceptable.
Screen (see table E–IV
of
MIL–PRF–19500)
3c (1)
11
12
13
Measurement
JANTX and JANTXV level
Thermal impedance (see 4.3.1)
I
CBO
and h
FE2
See 4.3.2.
See
table I,
subgroup 2 herein
∆I
CBO
= 100 percent of initial value, or 10 nA dc
whichever is greater;
∆h
FE2
= ±15 percent of initial value.
(1) Thermal impedance shall be performed anytime before screen 10 and does not
need to be repeated in the screening requirements.
4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test
method 3131 of
MIL–STD–750
using the guidelines in that test method for determining I
H
, I
M
, t
H
, t
SW
, (and V
C
where
appropriate). The thermal impedance limit used in 4.3, screen 3c and
table I,
subgroup 2 shall comply with the
thermal impedance graph on
figures 4
and
5
(less than or equal to the curve value at the same t
H
time) and shall be
less than the process determined statistical maximum limit as outlined in test method 3131 of
MIL–STD–750.
4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: V
CB
= 10 to 30 V dc. Power shall be
applied to achieve T
J
= +135°C minimum using a minimum P
D
= 75 percent of P
T
maximum, T
A
ambient rated as
defined in
1.3.
With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, T
J
, and mounting conditions) may be used. A justification demonstrating equivalence is required. In
addition, the manufacturing site’s burn-in data and performance history will be essential criteria for burn-in
modification approval.
4.4 Conformance inspection. Conformance inspection shall be in accordance with
MIL–PRF–19500,
and as
specified herein. If alternate screening is being performed in accordance with
MIL–PRF–19500,
a sample of
screened devices shall be submitted to and pass the requirements of
table I,
subgroups 1 and 2 herein. Table
E–VIB, subgroup 1, of
MIL–PRF–19500
is not required to be performed again since solderability and resistance to
solvents testing is performed in
table I,
subgroup 1 herein.
4.4.1 Group A inspection (small die flow). Group A inspection shall be conducted in accordance with table E–V of
MIL–PRF–19500
and
table I
herein. The small die flow part of table E–V, subgroup 1 shall apply. Electrical
measurements (end-points) shall be in accordance with
table I,
subgroup 2 herein.
4.4.2 Group B inspection (small die flow). Group B inspection shall be conducted in accordance with the test
methods and conditions specified for the applicable steps in table E–VIC of
MIL–PRF–19500
and herein. Electrical
measurements (end-points) and delta requirements shall be taken after each step in 4.4.2.1. Electrical measurements
(end-points) shall be in accordance with
table I,
subgroup 2 herein. Delta requirements shall be in accordance with
the applicable step of
4.6
herein.
5
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