MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9120/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applications
in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 x 500 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: –45 dBc @ 30 kHz BW
1.98 MHz: –60 dBc @ 30 kHz BW
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF9120
MRF9120S
880 MHz, 120 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375B–04, STYLE 1
NI–860
MRF9120
CASE 375H–03, STYLE 1
NI–860S
MRF9120S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
– 0.5, +15
250
1.43
– 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.45
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF9120 MRF9120S
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
(1) Each side of device measured separately.
(continued)
C
oss
C
rss
—
—
50
2
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
3
3.8
0.17
5.3
4
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF9120 MRF9120S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
(2)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push–pull configuration.
G
ps
15
16.5
—
dB
Symbol
Min
Typ
Max
Unit
η
36
39
—
%
IMD
—
–31
–28
dBc
IRL
—
–16
–9
dB
G
ps
—
16.5
—
dB
η
—
40.5
—
%
IMD
—
–30
—
dBc
IRL
—
–13
—
dB
P
1dB
—
120
—
W
G
ps
—
16
—
dB
η
—
51
—
%
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
MRF9120 MRF9120S
3
B6
V
GG
B3
+
C30
C11
Balun 1
R1
C8
Z12
Z14
Z16
Z18
B4
C10
L1
C21
+
C25
+
C26
+
C27
V
DD
Z20
Z22
C19
Z24
Z26
Z27
RF
OUTPUT
RF
INPUT
Z2
Z1
C2
C1
Z3
Z4
Z6
Z8
Z10
C3
Z5
Z7
C4
Z9
C5
Z11
C6
Z13
C7
Z15
DUT
C13 C14 C15 C16 C17
C20
Z17
Z19
C12
Z21
Z23
C18
Z25
Balun 2
L2
C22
B5
+
C23
+
C24
+
C28
V
DD
R2
C9
V
GG
B1
+
C29
B2
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
0.420″ x 0.080″ Microstrip
0.090″ x 0.420″ Microstrip
0.125″ x 0.220″ Microstrip
0.095″ x 0.220″ Microstrip
0.600″ x 0.220″ Microstrip
0.200″ x 0.630″ Microstrip
0.500″ x 0.630″ Microstrip
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26
Z27
0.040″ x 0.630″ Microstrip
0.040″ x 0.630″ Microstrip
0.330″ x 0.630″ Microstrip
0.450″ x 0.630″ Microstrip
0.750″ x 0.220″ Microstrip
0.115″ x 0.420″ Microstrip
0.130″ x 0.080″ Microstrip
0.350″ x 0.080″ Microstrip
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9120 MRF9120S
4
MOTOROLA RF DEVICE DATA
Table 1. 880 MHz Broadband Test Circuit Component Designations and Values
Part
B1, B3, B5, B6
B2, B4
C1, C2
C3, C6
C4
C5
C7, C8
C9, C10, C21, C22
C11, C12
C13
C14
C15
C16
C17
C18, C19
C20
C29, C30
C23, C24, C25, C26
C27, C28
Balun 1, Balun 2
L1, L2
R1, R2
WB1, WB2, WB3, WB4
Board Material
PCB
Description
Long Ferrite Beads, Surface Mount
Short Ferrite Beads, Surface Mount
68 pF Chip Capacitors, B Case
0.8 – 8.0 pF Variable Capacitors
7.5 pF Chip Capacitor, B Case
3.3 pF Chip Capacitor, B Case
11 pF Chip Capacitors, B Case
51 pF Chip Capacitors, B Case
6.2 pF Chip Capacitors, B Case
4.7 pF Chip Capacitor, B Case
5.1 pF Chip Capacitor, B Case
3.0 pF Chip Capacitor, B Case
2.7 pF Chip Capacitor, B Case
0.6 – 4.5 pF Variable Capacitor
47 pF Chip Capacitors, B Case
0.4 – 2.5 pF Variable Capacitor
10
µF,
35 V Tantalum Chip Capacitors
22
µF,
35 V Tantalum Chip Capacitors
220
µF,
50 V Electrolytic Capacitors
Xinger Surface Mount Balun Transformers
12.5 nH Mini Spring Inductors
510
Ω,
1/4 W Chip Resistors
10 mil Brass Wear Blocks
30 mil Glass Teflon
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
900 MHz Push–Pull Rev 01B
900 MHz Push–Pull Rev 01B
CMR
CMR
Value, P/N or DWG
95F787
95F786
100B680JP500X
44F3360
100B7R5JP150X
100B3R3CP150X
100B110BCA500X
100B510JP500X
100B6R2BCA150X
100B4R7BCA150X
100B5R1BCA150X
100B2R7BCA150X
100B3R0BCA150X
44F3358
100B470JP500X
44F3367
93F2975
92F1853
14F185
3A412
A04T–5
Manufacturer
Newark
Newark
ATC
Newark
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Newark
ATC
Newark
Newark
Newark
Newark
Anaren
Coilcraft
Garret
V
GG
C30
B3
B4
MRF9120
900 MHz
PUSH PULL
Rev 01B
B6
C27 V
DD
C10
Balun1
C2
INPUT
C1
C3
C4
WB2
C6
R2
C9
R1
C5
C8
WB1
CUTOUT AREA
C11
WB3
C21
L1
C17
C13-C15
L2
C16
C25 C26
Balun2
C19
OUTPUT
C18
C20
C7
C12
WB4
C22
C23 C24
B5
C28 V
DD
V
GG
C29
B1
B2
Figure 2. 865–895 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9120 MRF9120S
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
