BC309BRL1,BC309BRL1 pdf中文资料,BC309BRL1引脚图,BC309BRL1电路-Datasheet-电子工程世界

BC309BRL1: 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; 产品类别分立半导体晶体管; 文件大小86KB，共3页; 制造商Motorola ( NXP ); 官网地址https://www.nxp.com

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BC309BRL1概述

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC309BRL1规格参数

参数名称	属性值
包装说明	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	25 V
配置	SINGLE
最小直流电流增益 (hFE)	200
JEDEC-95代码	TO-92
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	PNP
功耗环境最大值	1 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	360 MHz
VCEsat-Max	0.6 V
Base Number Matches	1

BC309BRL1相似产品对比

	BC309BRL1	BC309BRL	BC309BRLRB	BC309BRLRE	BC309BRLRF	BC309BZL1	BC309BRLRA	BC309BRLRP
描述	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
集电极-发射极最大电压	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	200	200	200	200	200	200	200	200
JEDEC-95代码	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
功耗环境最大值	1 W	1 W	1 W	1 W	1 W	1 W	1 W	1 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	360 MHz	360 MHz	360 MHz	360 MHz	360 MHz	360 MHz	360 MHz	360 MHz
VCEsat-Max	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V
厂商名称	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	-	-	Motorola ( NXP )	Motorola ( NXP )

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