PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ZTX758
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-400
-400
-5
-1
-500
1
5.7
-55 to +200
UNIT
V
V
V
A
mA
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
MIN.
TYP.
MAX.
UNIT
V
V
V
-100
-100
-100
-0.30
-0.25
-0.50
-0.9
-0.9
50
50
40
3-267
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
-400
-400
-5
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
ZTX758
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Transition
Frequency
Output Capacitance
Switching times
SYMBOL MIN.
f
T
C
obo
t
on
t
off
140
2000
50
20
TYP.
MAX.
UNIT
MHz
pF
ns
ns
CONDITIONS.
I
C
=-20mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-100mA, V
C
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-268
ZTX758
TYPICAL CHARACTERISTICS
1.6
1.4
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
T
amb
=25°C
1.6
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
V
CE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
20
V
CE(sat)
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
h
FE
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
V
CE
=10V
300
1.6
1.4
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
h
FE
- Typical Gain
V
BE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
1.0
-55°C
+25°C
+100°C
+175°C
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
V
CE
=10V
1.6
1.4
I
C
- Collector Current (Amps)
V
BE
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.001
1
10
100
1000
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-269
51单片机
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