FCX705
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
SUMMARY
V
CEO
=120V; V
CE(sat)
= 1.3V; I
C
= -1A
DESCRIPTION
This new PNP Darlington transistor provides users with very efficient performance
combining low V
CE (sat)
and very high H
FE
to give extremely low on state losses at
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.
SOT89
FEATURES
•
Low Saturation Voltage
•
H
FE
min 3K @ -1A
•
I
C
= -2A Continuous
•
SOT89 package with Ptot - 1W
•
Specification is also available in Eline and SOT223
package outlines
APPLICATIONS
•
Various driving functions
- Lamps
- Motors
- Relays and solenoids
•
High output current switches
ORDERING INFORMATION
DEVICE
FCX705TA
REEL
SIZE
7’‘
TAPE
WIDTH
12mm
QUANTITY
PER REEL
1000 units
DEVICE MARKING
705
Top View
ISSUE 4 - DECEMBER 2002
1
SEMICONDUCTORS
FCX705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
LIMIT PNP
-140
-120
-10
-4
-1
1
8
2.8
22
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
125
45
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 4 - DECEMBER 2002
SEMICONDUCTORS
2
FCX705
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-140
-120
-10
-100
-10
TYP.
MAX. UNIT
V
V
V
nA
µA
CONDITIONS.
I
C
= -100 A
I
C
= -10mA*
I
E
= -100 A
V
CB
= -10V
V
CB
= -120V
Tamb = 100°C
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
I
EBO
I
CES
V
CE(sat)
-0.1
-10
-1.3
-2.5
V
BE(sat)
V
BE(on)
h
FE
3K
3K
3K
2K
160
90
15
0.6
0.8
-1.8
-1.7
µA
µA
V
V
V
V
V
EB
= -8V
V
CES
= -120V
I
C
= -1A, I
B
= -1mA*
I
C
= -2A, I
B
= -2mA*
I
C
= -1A, I
B
= -1mA*
I
C
= -1A, V
CE
= -5V*
I
C
=
I
C
=
I
C
=
I
C
=
MHz
pF
pF
µs
µs
-10mA, V
CE
= -5V*
-100mA, V
CE
= -5V*
-1A, V
CE
= -5V*
-2A, V
CE
= -5V*
30K
Transition Frequency
Input Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
ibo
C
obo
t
(on)
t
(off)
I
C
= -100mA, V
CE
= -10V
f= 20MHz
V
CB
= -500mV, f= 1MHz
V
CB
= -10V, f= 1MHz
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Nb. Spice parameter data is available upon request for this device.
ISSUE 4 - DECEMBER 2002
3
SEMICONDUCTORS
FCX705
PNP CHARACTERISTICS
ISSUE 4 - DECEMBER 2002
SEMICONDUCTORS
4
FCX705
PACKAGE DIMENSIONS
A
H
C
PAD LAYOUT DETAILS
K
D B
G
N
F
Millimetres
DIM
Min
A
B
C
D
F
G
H
K
L
N
4.40
3.75
1.40
-
0.28
0.38
1.50
2.60
2.90
1.4
Max
4.60
4.25
1.60
2.60
0.45
0.55
1.80
2.85
3.10
1.60
Min
Inches
Max
0.181
0.167
0.630
0.102
0.018
0.022
0.072
0.112
0.112
0.063
0.173
.150
0.550
-
0.011
0.015
0.060
0.102
0.114
0.055
© Zetex plc 2003
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Telephone: (852) 26100 611
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 4 - DECEMBER 2002
5
SEMICONDUCTORS
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