Power Bipolar Transistor, 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, METAL GLASS, DIP-18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIP |
| 包装说明 | IN-LINE, R-CDIP-T18 |
| 针数 | 18 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 集电极-发射极最大电压 | 50 V |
| 配置 | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 |
| JESD-30 代码 | R-CDIP-T18 |
| JESD-609代码 | e0 |
| 元件数量 | 8 |
| 端子数量 | 18 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| ULS-2804H | ULS-2814H | ULS-2803R | ULS-2811R | |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, METAL GLASS, DIP-18 | Power Bipolar Transistor, 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, METAL GLASS, DIP-18 | Power Bipolar Transistor, 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Glass-Sealed, 18 Pin, HERMETIC SEALED, CERAMIC GLASS, CERDIP-18 | Power Bipolar Transistor, 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Glass-Sealed, 18 Pin, HERMETIC SEALED, CERAMIC GLASS, CERDIP-18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DIP | DIP | DIP |
| 包装说明 | IN-LINE, R-CDIP-T18 | IN-LINE, R-CDIP-T18 | IN-LINE, R-GDIP-T18 | IN-LINE, R-GDIP-T18 |
| 针数 | 18 | 18 | 18 | 18 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
| 配置 | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 1000 | 900 | 1000 | 900 |
| JESD-30 代码 | R-CDIP-T18 | R-CDIP-T18 | R-GDIP-T18 | R-GDIP-T18 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 8 | 8 | 8 | 8 |
| 端子数量 | 18 | 18 | 18 | 18 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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