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BZW04P15

产品描述Surface Mount TVS Diode; Direction: Single; PPK Max (W): 400W; Condition: 10×1000us; VRWM Max (V): 15.3V; VBR Min (V): 17.1V; VBR Max (V): 19.8V; IR Max (uA): 1uA; VC Max (V): 25.2V; Package: DO-41
产品类别分立半导体    二极管   
文件大小317KB,共4页
制造商Galaxy Microelectronics
标准
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BZW04P15概述

Surface Mount TVS Diode; Direction: Single; PPK Max (W): 400W; Condition: 10×1000us; VRWM Max (V): 15.3V; VBR Min (V): 17.1V; VBR Max (V): 19.8V; IR Max (uA): 1uA; VC Max (V): 25.2V; Package: DO-41

BZW04P15规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码DO-41
Reach Compliance Codeunknown
Is SamacsysN
击穿电压标称值18.45 V
最大钳位电压25.2 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
极性UNIDIRECTIONAL
最大重复峰值反向电压15.3 V
表面贴装NO
Base Number Matches1

文档预览

下载PDF文档
BL
FEATURES
GALAXY ELECTRICAL
BZW04P-5V8 --- BZW04-376
BREAKDOWN VOLTAGE: 5.8 --- 376 V
PEAK PULSE POWER: 400 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
underwriters laboratory
flam
mability
classification
94V-0
Glass passivated junction
400W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.01%
Excellent clam ping capability
Fast response tim e: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
Devices with V
(BR)
10V I
D
are typically I
D
less than 1.0
μA
High temperature soldering guaranteed:265 / 10 seconds,
0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension
DO-41
MECHANICAL DATA
Case:JEDEC DO--41, molded plastic body over
passivated junction
Term inals:
axial
leads, solderable per MIL-STD-750,
m ethod 2026
Polarity:
foruni-directional
types the color band denotes
the cathode, which is postitive with respect to the
anode under normal TVS operation
Weight: 0.012 ounces, 0.34 gram s
Mounting position:
any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient tem perature unless otherwise specified.
SYMBOL
Peak
pow
er
dissipation
w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak
pulse current
w ith a 10/1000μs w aveform (NOTE 1)
Steady
state pow
er
dissipation
at T
L
=75
fffffLead
lengths
0.375"(9.5mm) (NOTE 2)
Peak
forw
ard
surge current,
8.3ms
single
half
ffffSine-wave
superimposed
on
rated load
(JEDEC Method) (NOTE 3)
Maximum
instantaneous forw
ard
voltage
at 25A for unidirectional only (NOTE 4)
Operating
junction
and
storage temperature range
VALUE
Minimum 400
See
table
1
1.0
40.0
3.5/6.5
-55---+150
UNIT
W
A
W
A
V
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
www.galaxycn.com
Document Number
1785007
BL
GALAXY ELECTRICAL
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