MUN5211T1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
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Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN3
COLLECTOR
(OUTPUT)
R1
PIN1 R2
BASE
(INPUT)
PIN2
EMITTER
(GROUND)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
•
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C
(1.)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
150
1.2
mW
mW/°C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
3
1
2
CASE 419
SC–70/SOT–323
STYLE 3
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
(2.)
MUN5216T1
(2.)
MUN5230T1
(2.)
MUN5231T1
(2.)
MUN5232T1
(2.)
MUN5233T1
(2.)
MUN5234T1
(2.)
MUN5235T1
(2.)
Marking
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
Shipping
3000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
©
Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 3
Publication Order Number:
MUN5211T1/D
MUN5211T1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
Max
833
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
I
CBO
I
CEO
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
—
—
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage
(3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
—
60
100
140
140
350
350
5.0
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5230T1/MUN5231T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5215T1/MUN5216T1
MUN5232T1/MUN5233T1/MUN5234T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN5211lT1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5213T1
V
CE(sat)
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
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MUN5211T1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
MUN5230T1
MUN5215T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
MUN5216T1
MUN5233T1
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5211T1/MUN5212T1/MUN5213T1
MUN5214T1
MUN5215T1/MUN5216T1
MUN5230T1/MUN5231T1/MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.17
—
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
—
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
—
1.2
0.185
0.56
0.056
k
Ω
Resistor Ratio
R1/R2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
R
θJA
= 833°C/W
50
0
– 50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= –25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
–25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= –25°C
25°C
75°C
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
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MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
25°C
0.1
T
A
= –25°C
75°C
hFE, DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
T
A
= 75°C
25°C
–25°C
100
0.01
0.001
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
IC, COLLECTOR CURRENT (mA)
75°C
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
1
0.01
V
O
= 5 V
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
0
2
4
6
V
in
, INPUT VOLTAGE (VOLTS)
8
10
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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