BPW16N
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW16N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D
Miniature T–
¾
flat clear plastic package
D
Very wide viewing angle
ϕ
=
±
40
°
D
Suitable for 0.1” (2.54 mm) center to center spac-
ing
94 8638
D
Suitable for visible and near infrared radiation
D
Compatible with IR diode CQY36N
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
55
°
C
x
x
t
x
3s
Document Number 81515
Rev. 2, 20-May-99
www.vishay.com
1 (5)
BPW16N
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
= 950 nm, V
CE
= 5 V
Symbol
V
(BR)CE
O
Min
32
Typ
Max
Unit
V
nA
pF
mA
deg
nm
nm
V
l
I
CEO
C
CEO
I
ca
0.07
1
8
0.14
±40
825
620...960
200
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
E
e
= 1 mW/cm
2
,
Voltage
= 950 nm, I
C
= 0.01 mA
Turn–On Time
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
Turn–Off Time
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
Cut–Off Frequency
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
ϕ
l
0.3
4.8
5.0
120
W
W
W
m
s
m
s
kHz
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
125
P
tot
– Total Power Dissipation ( mW )
100
I
CEO
– Collector Dark Current ( nA )
10
4
10
3
V
CE
=20V
10
2
75
R
thJA
50
25
0
0
20
40
60
80
100
10
1
10
0
20
94 8235
40
60
80
100
94 8308
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
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2 (5)
Document Number 81515
Rev. 2, 20-May-99
BPW16N
Vishay Telefunken
2.0
I
ca rel
– Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
C
CEO
– Collector Emitter Capacitance ( pF )
20
16
f=1MHz
V
CE
=5V
E
e
=1mW/cm
2
=950nm
l
12
8
4
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
20
40
60
80
100
94 8240
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs.
Ambient Temperature
t
on
/ t
off
– Turn on / Turn off Time ( s )
1
I
ca
– Collector Light Current ( mA )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10
8
6
4
2
0
t
off
t
on
V
CE
=5V
R
L
=100
=950nm
m
0.1
l
W
0.01
l
V
CE
=5V
=950nm
0.001
0.01
94 8236
0.1
1
10
94 8238
0
4
8
12
16
E
e
– Irradiance ( mW / cm
2
)
I
C
– Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance
1
I
ca
– Collector Light Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( )
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
400
l
=950nm
0.1
E
e
=1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.01
0.1
94 8237
1
10
100
94 8241
l
600
V
CE
– Collector Emitter Voltage ( V )
l
– Wavelength ( nm )
800
1000
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81515
Rev. 2, 20-May-99
www.vishay.com
3 (5)
BPW16N
Vishay Telefunken
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8312
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
96 12188
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4 (5)
Document Number 81515
Rev. 2, 20-May-99
BPW16N
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81515
Rev. 2, 20-May-99
www.vishay.com
5 (5)
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