March 2001
®
AS29LV800
3V 1M × 8/512K × 16 CMOS Flash EEPROM
Features
• Organization: 1M×8/512K×16
• Sector architecture
- One 16K; two 8K; one 32K; and fifteen 64K byte sectors
- One 8K; two 4K; one 16K; and fifteen 32K word sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
• Hardware RESET pin
- Resets internal state machine to read mode
• Low power consumption
- 200 nA typical automatic sleep mode current
- 200 nA typical standby current
- 10 mA typical read current
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO; availability TBD
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- DQ2 toggle bit
- RY/BY output
• Erase suspend/resume
- Supports reading data from or programming data to a
sector not being erased
• Low V
CC
write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance
Logic block diagram
RY/BY
V
CC
V
SS
RESET
Program/erase
control
Command
register
CE
OE
A-1
Program voltage
generator
Chip enable
Output enable
Logic
STB
Data latch
Sector protect/
erase voltage
switches
Erase voltage
generator
DQ0–DQ15
Pin arrangement
48-pin TSOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
44-pin SO
Input/output
buffers
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE
BYTE
AS29LV800
V
CC
detector
Timer
Address latch
STB
Y decoder
Y gating
X decoder
Cell matrix
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
V
SS
CE
A0
A0–A18
Selection guide
29LV800-70R
*
Maximum access time
Maximum chip enable access time
Maximum output enable access time
* Regulated voltage range of 3.0 to 3.6V
29LV800-80
80
80
30
29LV800-90
90
90
35
29LV800-120
120
120
50
AS29LV800
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
DQ15/A-1
A16
BYTE
V
SS
Unit
ns
ns
ns
t
AA
t
CE
t
OE
70
70
30
3/22/01; V.1.0
Alliance Semiconductor
P. 1 of 25
Copyright © Alliance Semiconductor. All rights reserved.
March 2001
®
AS29LV800
Functional description
The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each. For
flexible erase and program capability, the 8 megabits of data is divided into nineteen sectors: one 16K, two 8K, one 32K, and
fifteen 64k byte sectors; or one 8K, two 4K, one 16K, and fifteen 32K word sectors. The ×8 data appears on DQ0–DQ7; the
×16 data appears on DQ0–DQ15. The AS29LV800 is offered in JEDEC standard 48-pin TSOP and 44-pin SOP packages. This
device is designed to be programmed and erased in-system with a single 3.0V V
CC
supply. The device can also be
reprogrammed in standard EPROM programmers.
The AS29LV800 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. To
eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. Word
mode (×16 output) is selected by BYTE = high. Byte mode (×8 output) is selected by BYTE = low.
The AS29LV800 is fully compatible with the JEDEC single power supply Flash standard. Write commands are sent to the
command register using standard microprocessor write timings. An internal state-machine uses register contents to control the
erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Read data from the device occurs in the same manner as other Flash or EPROM devices. Use the program command
sequence to invoke the automated on-chip programming algorithm that automatically times the program pulse widths and
verifies proper cell margin. Use the erase command sequence to invoke the automated on-chip erase algorithm that
preprograms the sector (if it is not already programmed before executing the erase operation), times the erase pulse widths,
and verifies proper cell margin.
Boot sector architecture enables the system to boot from either the top (AS29LV800T) or the bottom (AS29LV800B) sector.
Sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other
sectors. A sector typically erases and verifies within 1.0 seconds. Hardware sector protection disables both program and erase
operations in all, or any combination of, the nineteen sectors. The device provides true background erase with Erase Suspend,
which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased. The chip
erase command will automatically erase all unprotected sectors.
A factory shipped AS29LV800 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is programmed into
the array one byte at a time in any sequence and across sector boundaries. A sector must be erased to change bits from 0 to 1.
Erase returns all bytes in a sector to the erased state (all bits = 1). Each sector is erased individually with no effect on other
sectors.
The device features single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and
regulated voltages are provided for the Program and Erase operations. A low V
CC
detector automatically inhibits write
operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of
program or erase operations. The device automatically resets to the read mode after program/erase operations are completed.
DQ2 indicates which sectors are being erased.
The AS29LV800 resists accidental erasure or spurious programming signals resulting from power transitions. Control register
architecture permits alteration of memory contents only after successful completion of specific command sequences. During
power up, the device is set to read mode with all program/erase commands disabled when V
CC
is less than V
LKO
(lockout
voltage). The command registers are not affected by noise pulses of less than 5 ns on OE, CE, or WE. To initiate write
commands, CE and WE must be logical zero and OE a logical 1.
When the device’s hardware RESET pin is driven low, any program/erase operation in progress is terminated and the internal
state machine is reset to read mode. If the RESET pin is tied to the system reset circuitry and a system reset occurs during an
automated on-chip program/erase algorithm, data in address locations being operated on may become corrupted and requires
rewriting. Resetting the device enables the system’s microprocessor to read boot-up firmware from the Flash memory.
The AS29LV800 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes are
programmed one at a time using EPROM programming mechanism of hot electron injection.
3/22/01; V.1.0
Alliance Semiconductor
P. 2 of 25
March 2001
®
AS29LV800
Operating modes
Mode
ID read MFR code
ID read device code
Read
Standby
Output disable
Write
Enable sector protect
Sector unprotect
Temporary sector
unprotect
Verify sector protect
†
Hardware Reset
CE
L
L
L
H
L
L
L
L
X
L
X
OE
L
L
L
X
H
H
V
ID
V
ID
X
L
L
X
WE
H
H
H
X
H
L
Pulse/L
Pulse/L
X
H
H
X
A0
L
H
A0
X
X
A0
L
L
X
L
L
X
A1
L
L
A1
X
X
A1
H
H
X
H
H
X
A6
L
L
A6
X
X
A6
L
H
X
L
H
X
A9
V
ID
V
ID
A9
X
X
A9
V
ID
V
ID
X
V
ID
V
ID
X
RESET
H
H
H
H
H
H
H
H
V
ID
H
H
L
DQ
Code
Code
D
OUT
High Z
High Z
D
IN
X
X
X
Code
Code
High Z
Verify sector unprotect
†
L
L = Low (<V
IL
) = logic 0; H = High (>V
IH
) = logic 1; V
ID
= 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = V
IH
. In ×8 mode, BYTE = V
IL
with DQ8-DQ14 in high Z and DQ15 = A-1.
†
Verification of sector protect/unprotect during A9 = V
ID.
Mode definitions
Item
ID MFR code,
device code
Read mode
Description
Selected by A9 = V
ID
(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (V
IL
) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (V
IH
), D
OUT
represents the device code for the AS29LV800.
Selected with CE = OE = L, WE = H. Data is valid in t
ACC
time after addresses are stable, t
CE
after CE is low
and t
OE
after OE is low.
Selected with CE = H. Part is powered down, and I
CC
reduced to <1.0 µA when CE = V
CC
± 0.3V = RESET. If
activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 14.
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm
on page 14.
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
sequence and reading location XXX02h, where address bits A12–18 select the defined sector addresses. A
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
Standby
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Write
Enable
sector protect
Sector
unprotect
Verify sector
protect/
unprotect
3/22/01; V.1.0
Alliance Semiconductor
P. 3 of 25
March 2001
®
AS29LV800
Item
Temporary
sector
unprotect
RESET
Deep
power down
Automatic
sleep mode
Description
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +10V to RESET
to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected
sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal
of +10V from RESET.
Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data
may be corrupted.
Hold RESET low to enter deep power down mode (
<
1 µA). Recovery time to start of first read cycle is 50ns.
Enabled automatically when addresses remain stable for 300ns. Typical current draw is 1 µA. Existing data is
available to the system during this mode. If an address is changed, automatic sleep mode is disabled and new
data is returned within standard access times.
Flexible sector architecture
Bottom boot sector architecture (AS29LV800B)
Sector
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
×8
00000h–03FFFh
04000h–05FFFh
06000h–07FFFh
08000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–FFFFFh
×16
00000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
Size
(Kbytes)
16
8
8
32
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
Top boot sector architecture (AS29LV800T)
×8
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–F7FFFh
F8000h–F9FFFh
FA000h–FBFFFh
FC000h–FFFFFh
×16
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7BFFFh
7C000h–7CFFFh
7D000h–7DFFFh
7E000h–7FFFFh
Size
(Kbytes)
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
8
8
16
In word mode, there are one 8K word, two 4K word, one 16K word, and fifteen 32K word sectors. Address range is A18–A-1 if BYTE = V
IL
; address range is
A18–A0 if BYTE = V
IH
.
3/22/01; V.1.0
Alliance Semiconductor
P. 4 of 25
March 2001
®
AS29LV800
ID Sector address table
Bottom boot sector address
(AS29LV800B)
Sector
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
A18
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
A17
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
A16
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
A15
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
A14
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A13
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A12
X
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A18
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
A17
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
A16
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
Top boot sector address
(AS29LV800T)
A15
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
A14
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
1
A13
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
A12
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
READ codes
Mode
MFR code (Alliance Semiconductor)
×8 T boot
Device code
×8 B boot
×16 T boot
×16 B boot
Sector protection
Key: L =Low (<V
IL
); H = High (>V
IH
); X =Don’t care
A18–A12
X
X
X
X
X
Sector address
A6
L
L
L
L
L
L
A1
L
L
L
L
L
H
A0
L
H
H
H
H
L
Code
52h
DAh
5Bh
22DAh
225Bh
01h protected
00h unprotected
3/22/01; V.1.0
Alliance Semiconductor
P. 5 of 25
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