Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in full pack, plastic
envelopes, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYW29F series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
PARAMETER
BYW29F-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - SOD100
PIN
1
2
DESCRIPTION
cathode
anode
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Average forward current
2
square wave;
δ
= 0.5;
T
hs
≤
106 ˚C
sinusoidal; a = 1.57;
T
hs
≤
109 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
hs
≤
109 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
1
T
hs
≤
141˚C for thermal stability.
2
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ISOLATION
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
C
isol
PARAMETER
Repetitive peak voltage from
both terminals to external
heatsink
Capacitance from cathode to
external heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
f = 1 MHz
MIN.
-
-
BYW29F series
TYP.
-
12
MAX.
1500
-
UNIT
V
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.3
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 10 A; V
R
≥
30 V; T
j
= 100 ˚C;
-dI
F
/dt = 50 A/µs
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
1
1
MAX.
11
25
2
-
UNIT
nC
ns
A
V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29F series
I
dI
F
dt
F
8
7
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
Ths(max) / C
a = 1.57
1.9
2.2
106
111.5
117
122.5
128
133.5
139
144.5
t
6
rr
time
5
4
3
4
2.8
Q
I
R
I
s
10%
100%
2
1
rrm
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
1000
I
F
100
IF=10A
time
IF=1A
V
F
V
V
F
time
10
fr
1
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25 ˚C.
12
10
8
6
PF / W
Vo = 0.791 V
Rs = 0.013 ohms
BYW29
Ths(max) / C
D = 1.0
84
95
trr / ns
1000
0.5
0.2
0.1
106
117
128
139
T
t
100
IF=10A
IF=1A
4
I
t
p
D=
t
p
T
10
2
0
0
2
4
6
IF(AV) / A
8
10
150
12
1
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 100 ˚C.
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYW29F series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.12. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
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