Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
9.0
t.b.f
-
0.4
t.b.f
MAX.
1500
800
12
30
45
3.0
-
-
2.2
0.55
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
µs
µs
T
hs
≤
25 ˚C
I
C
= 9.0 A; I
B
= 2.25 A
f = 16 kHz
f = 70 kHz
I
F
= 9.0 A
I
Csat
= 9.0 A;f = 16 kHz
f = 70 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
1
Turn-off current.
July 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
I
B
= 600 mA
V
EB
= 7.5 V
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 9.0 A; V
CE
= 5 V
I
F
= 9 A
MIN.
-
-
7.5
-
800
-
0.96
-
4.2
-
TYP.
-
-
13.5
50
-
-
1.01
t.b.f
5.8
MAX.
1.0
2.0
-
-
-
3.0
1.06
-
7.6
2.2
UNIT
mA
mA
V
Ω
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
I
Csat
= t.b.f
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 9.0 A;I
B1
= 1.8 A
(I
B2
= -4.5 A)
3.7
0.4
4.5
0.55
µs
µs
TYP.
145
MAX.
-
UNIT
pF
2
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
15.3 max
0.7
7.3
3.1
3.3
6.2
5.8
21.5
max
3.2
5.2 max
o
45
seating
plane
3.5
3.5 max
not tinned
15.7
min
1
2.1 max
2
3
1.2
1.0
5.45
0.7 max
0.4 M
2.0
5.45
Fig.1. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
4
Rev 1.000
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