DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BRY61
Programmable unijunction
transistor
Product specification
Supersedes data of 1997 Jul 21
1999 Apr 27
Philips Semiconductors
Product specification
Programmable unijunction transistor
DESCRIPTION
Planar PNPN trigger device in a
SOT23 plastic package.
APPLICATIONS
•
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
MARKING
1
2
handbook, 2 columns
BRY61
PINNING
PIN
1
2
3
anode
cathode
gate
DESCRIPTION
3
handbook, halfpage
anode
a
g
gate
TYPE
NUMBER
BRY61
Note
MARKING
CODE
(1)
A5∗
k
cathode
MGL167
Top view
MGC421
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1 Simplified outline SOT23 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
GA
I
A(AV)
I
ARM
I
ASM
dl
A
/dt
P
tot
T
stg
T
j
T
amb
PARAMETER
gate-anode voltage
average anode current
repetitive peak anode current
rate of rise of anode current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
t
p
= 10
µs; δ
= 0.01
1
A
≤
2.5 A
T
amb
≤
25
°C
non-repetitive peak anode current t
p
= 10
µs
CONDITIONS
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
70
175
2.5
3
20
250
+150
150
+150
V
mA
A
A
A/µs
mW
°C
°C
°C
UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
500
BRY61
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
P
I
V
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
PARAMETER
peak point current
valley point current
offset voltage
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
rise time
CONDITIONS
V
S
= 10 V; R
G
= 10 kΩ; (see Fig.7)
V
S
= 10 V; R
G
= 100 kΩ; (see Fig.7)
V
S
= 10 V; R
G
= 10 kΩ; (see Fig.7)
V
S
= 10 V; R
G
= 100 kΩ; (see Fig.7)
typical curve; I
A
= 0; (see Fig.7)
I
K
= 0; V
GA
= 70 V; (see Fig.5)
V
AK
= 0; V
KG
= 70 V; (see Fig.6)
I
A
= 100 mA
V
AA
= 20 V; C = 10 nF;
(see Figs 8 and 9)
V
AA
= 20 V; C = 10 nF; (see Fig.9)
MIN.
−
−
2
1
−
−
−
−
6
−
−
−
−
−
V
P
−
V
S
−
−
−
−
−
TYP.
MAX.
0.2
0.06
−
−
−
10
100
1.4
−
80
UNIT
µA
µA
µA
µA
V
nA
nA
V
V
ns
handbook, full pagewidth
+40
V
BZY88-
C8V2
5 kΩ
100
µF
BY206
(2x)
R1
750
Ω
40 K
A
1 nF
D.U.T
10 kΩ
20
Ω
osc.
RG
VS
MBK189
I
P
and I
V
determined by value of R1.
1
R1
=
---- ; i.e. maximum voltage drop over R1 = 1 V.
I
A
Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
1999 Apr 27
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY61
handbook, halfpage
+V
B
handbook, halfpage
IA
RG =
R1 R2
R1 R2
VB
R2
DUT
R1
VAK
DUT
VS =
R1
R1 R2
MEA141
MBB699
Fig.4
Fig.3 BRY61 with ‘program’ resistors R1 and R2.
Equivalent test circuit for characteristics
testing.
handbook, halfpage
DUT
I GAO
handbook, halfpage
I GKS
DUT
VGA
VGK
MBB697
MBB696
Fig.5
Equivalent test circuit for gate-anode
leakage current.
Fig.6
Equivalent test circuit for gate-cathode
leakage current.
1999 Apr 27
4
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY61
IA
handbook, halfpage
handbook, halfpage
VAA
1.5
MΩ
DUT
16 kΩ
C
I(V)
I(P)
VS V(P)
VAK
MEA143
VO
20
Ω
27 kΩ
MBB698
Fig.7 Offset voltage.
Fig.8 Test circuit for peak output voltage.
handbook, halfpage
VO
MBB701
VOM
90 %
10 %
tr
time
Fig.9 Peak output voltage.
1999 Apr 27
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
