UT54ACS164245S/SE

RadHard Schmitt CMOS 16-bit Bidirectional MultiPurpose Transceiver

Datasheet

December 2004

www.aeroflex.com/radhard

FEATURES

•

Voltage translation

- 5V bus to 3.3V bus

- 3.3V bus to 5V bus

•

Cold sparing

- 1MΩ minimum input impedance power-off

• 0.6µm

Commercial RadHard CMOS

- Total dose: 100K rad(Si)

- Single Event Latchup immune

•

High speed, low power consumption

•

Schmitt trigger inputs to filter noisy signals

•

Available QML Q or V processes

•

Standard Microcircuit Drawing 5962-98580

•

Package:

- 48-lead flatpack, 25 mil pitch (.390 x .640)

TM

LOGIC SYMBOL

OE1 (48)

OE2 (25)

(1)

DIR1

(47)

(46)

(44)

G1

G2

2EN1 (BA)

2EN2 (AB)

1EN1 (BA)

1EN2 (AB)

11

12

(24)

DIR2

1A1

1A2

1A3

(2)

(3)

(5)

(6)

(8)

1B1

1B2

1B3

1B4

(43)

1A4

(41)

1A5

(40)

1A6

(38)

1A7

(37)

1A8

(36)

2A1

2A2

2A3

(35)

(33)

21

22

1B5

(9)

1B6

(11)

1B7

(12)

1B8

(13)

2B1

(14)

2B2

(16)

2B3

(17)

2B4

(19)

2B5

(20)

2B6

(22)

2B7

(23)

2B8

DESCRIPTION

The 16-bit wide UT54ACS164245S MultiPurpose transceiver

is built using UTMC’s Commercial RadHard

TM

epitaxial

CMOS technology and is ideal for space applications. This high

speed, low power UT54ACS164245S transceiver is designed

to perform multiple functions including: asynchronous two-

way communication, signal buffering, voltage translation, and

cold sparing. With V

DD

equal to zero volts, the

UT54ACS164245S outputs and inputs present a minimum im-

pedance of 1MΩ making it ideal for "cold spare" applications.

Balanced outputs and low "on" output impedance make the

UT54ACS164245S well suited for driving high capacitance

loads and low impedance backplanes. The UT54ACS164245S

enables system designers to interface 3.3 volt CMOS compati-

ble components with 5 volt CMOS components. For voltage

translation, the A port interfaces with the 3.3 volt bus; the B

port interfaces with the 5 volt bus. The direction control (DIRx)

controls the direction of data flow. The output enable (OEx)

overrides the direction control and disables both ports. These

signals can be driven from either port A or B. The direction and

output enable controls operate these devices as either two inde-

pendent 8-bit transceivers or one 16-bit transceiver.

(32)

2A4

(30)

2A5

(29)

2A6

(27)

2A7

(26)

2A8

PIN DESCRIPTION

Pin Names

OEx

DIRx

xAx

xBx

Description

Output Enable Input (Active Low)

Direction Control Inputs

Side A Inputs or 3-State Outputs (3.3V Port)

Side B Inputs or 3-State Outputs (5V Port)

FUNCTION TABLE

ENABLE

OEx

L

H

DIRECTION

DIRx

L

H

X

OPERATION

B Data To A Bus

A Data To B Bus

Isolation

1

PINOUTS

POWER TABLE

1

Port B

5 Volts

Port A

3.3 Volts

5 Volts

3.3 Volts

V

SS

3.3V or 5V

OPERATION

Voltage Translator

Non Translating

Cold Spare

Port B Cold Spare

48-Lead Flatpack

Top View

DIR1

1B1

1B2

V

SS

1B3

1B4

VDD1

1B5

1B6

V

SS

1B7

1B8

2B1

2B2

V

SS

2B3

2B4

VDD1

2B5

2B6

V

SS

2B7

2B8

DIR2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

OE1

1A1

1A2

V

SS

1A3

1A4

VDD2

1A5

1A6

V

SS

1A7

1A8

2A1

2A2

V

SS

2A3

2A4

VDD2

2A5

2A6

V

SS

2A7

2A8

OE2

3.3 Volts

V

SS

V

SS

NOTE:

1. V

DD2

cannot be tied to V

SS

while power is applied to V

DD1

.

Control signals DIRx and OEx are 5 volt tolerant inputs. When

V

DD2

is at 3.3 volts, either 3.3 or 5 volt CMOS logic levels can

be applied to all control inputs. For proper operation connect

power to all V

DD

and ground all V

SS

pins (i.e., no floating V

DD

or V

SS

input pins). Tie unused inputs to V

SS

. If V

DD1

and V

DD2

are not powered up together, then V

DD2

should be powered up

first for proper control of OE and DIR. Until V

DD2

reaches

2.75V + 5%, control of the outputs by OE and DIR cannot be

guaranteed. During operation of the part, after power up, insure

V

DD1

> V

DD2

. Tie unused inputs to V

SS

.

2

LOGIC DIAGRAM

DIR1

(1)

(48)

OE1

DIR2

(24)

(25)

OE2

1A1

(47)

(2)

1B1

2A1

(36)

(13)

2B1

1A2

(46)

(3)

1B2

2A2

(35)

(14)

2B2

1A3

(44)

(5)

1B3

2A3

(33)

(16)

2B3

3.3V PORT

1A4

(43)

2A4

(32)

(17)

2B4

5 V PORT

(6)

1A5

(41)

(8)

1A6

(40)

(9)

1A7

(38)

(11)

1A8

(37)

(12)

1B4

2A5

(30)

(19)

2B5

1B5

2A6

1B6

2A7

1B7

2A8

1B8

(26)

(27)

(29)

(20)

2B6

(22)

2B7

(23)

2B8

3

5 V PORT

RADIATION HARDNESS SPECIFICATIONS

1

PARAMETER

Total Dose

SEL Latchup

Neutron Fluence

2

LIMIT

1.0E5

>120

1.0E14

UNITS

rad(Si)

MeV-cm

2

/mg

n/cm

2

Notes:

1. Logic will not latchup during radiation exposure within the limits defined in the table.

2. Not tested, inherent of CMOS technology.

ABSOLUTE MAXIMUM RATINGS

1

SYMBOL

V

I/O

(Port B)

2

V

I/O

(Port A)

2

V

DD1

V

DD2

T

STG

T

J

Θ

JC

I

P

D

PARAMETER

Voltage any pin during operation

Supply voltage

Storage Temperature range

Maximum junction temperature

Thermal resistance junction to case

DC input current

Maximum power dissipation

LIMIT (Mil only)

-.3 to V

DD1

+.3

-.3 to V

DD2

+.3

-0.3 to 6.0

-65 to +150

+175

20

±10

1

V

°C

°C/W

mA

W

UNITS

V

Note:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at

these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability and performance.

2. For cold spare mode (V

DD

= V

SS

), V

I/O

may be -0.3V to the maximum recommended operating V

DD

+ 0.3V.

DUAL SUPPLY OPERATING CONDITIONS

SYMBOL

V

DD1

V

DD2

V

IN

(Port B)

V

IN

(Port A)

T

C

PARAMETER

Supply voltage

Input voltage any pin

Temperature range

LIMIT

3.0 to 3.6 or 4.5 to 5.5

0 to V

DD1

0 to V

DD2

-55 to + 125

UNITS

V

°C

4

DC ELECTRICAL CHARACTERISTICS

1

( -55°C < T

C

< +125°C)

(T

C

= -55°C to +125°C for "C" screening and -40°C to +125°C for "W" screening)

SYMBOL

V

T

+

V

T

-

V

H1

V

H2

I

IN

PARAMETER

Schmitt Trigger, positive going threshold

2

CONDITION

V

DD

from 3.00 to 5.5

.3V

DD

0.6

0.4

-1

3

MIN

MAX

.7V

DD

UNIT

V

µA

Schmitt Trigger, negative going threshold

2

V

DD

from 3.00 to 5.5

Schmitt Trigger range of hysteresis

10

Schmitt Trigger range of hysteresis

10

Input leakage current

10

V

DD

from 4.5 to 5.5

V

DD

from 3.00 to 3.6

V

DD

from 3.6 to 5.5

V

IN

= V

DD

or V

SS

I

OZ

Three-state output leakage current

10

V

DD

from 3.6 to 5.5

V

IN

= V

DD

or V

SS

-1

3

µA

I

CS

Cold sparing leakage current

3

V

IN

= 5.5

V

DD

= V

SS

-1

5

µA

I

OS1

Short-circuit output current

6, 11

V

O

= V

DD

or V

SS

V

DD

from 4.5 to 5.5

-200

200

mA

I

OS2

Short-circuit output current

6, 11

V

O

= V

DD

or V

SS

V

DD

from 3.00 to 3.6

-100

100

mA

V

OL1

Low-level output voltage

4, 10

I

OL

= 8mA

I

OL

= 100µA

V

DD

= 4.5

0.4

0.2

V

OL2

Low-level output voltage

4, 10

I

OL

= 8mA

I

OL

= 100µA

V

DD

= 3.00

0.5

0.2

V

OH1

High-level output voltage

4, 10

I

OH

= -8mA

I

OH

= -100µA

V

DD

= 4.5

V

DD

- 0.7

V

DD

- 0.2

V

DD

- 0.9

V

DD

- 0.2

V

OH2

High-level output voltage

4, 10

I

OH

= -8mA

I

OH

= -100µA

V

DD

= 3.00

V

5

参数名称	属性值
厂商名称	Cobham Semiconductor Solutions
零件包装代码	DFP
包装说明	DFP,
针数	48
Reach Compliance Code	unknown
Is Samacsys	N
其他特性	4.5V TO 5.5V SUPPLY VOLTAGE ALSO AVAILABLE
系列	AC
JESD-30 代码	R-XDFP-F48
长度	15.875 mm
逻辑集成电路类型	BUS TRANSCEIVER
位数	8
功能数量	2
端口数量	2
端子数量	48
最高工作温度	125 °C
最低工作温度	-55 °C
输出特性	3-STATE
输出极性	TRUE
封装主体材料	UNSPECIFIED
封装代码	DFP
封装形状	RECTANGULAR
封装形式	FLATPACK
传播延迟（tpd）	20 ns
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class Q
座面最大高度	3.048 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	FLAT
端子节距	0.635 mm
端子位置	DUAL
总剂量	100k Rad(Si) V
宽度	9.652 mm
Base Number Matches	1

5962R9858004QXX

5962R9858004QXX概述

5962R9858004QXX规格参数

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