电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JAN1N914

产品描述Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小527KB,共4页
制造商VPT Inc
下载文档 详细参数 选型对比 全文预览

JAN1N914在线购买

供应商 器件名称 价格 最低购买 库存  
JAN1N914 - - 点击查看 点击购买

JAN1N914概述

Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

JAN1N914规格参数

参数名称属性值
厂商名称VPT Inc
包装说明O-LALF-W2
Reach Compliance Codecompliant
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
最大输出电流0.075 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.25 W
认证状态Qualified
参考标准MIL-19500/116
最大重复峰值反向电压75 V
最大反向恢复时间0.005 µs
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

下载PDF文档
1N914, 1N4148-1, 1N4531
Silicon Switching Diode
Rev. V3
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature:
-65°C
to +175°C
Operating Current: 200 mA @ T
A
= +25°C
Derating Factor: 1.14 mA/°C above T
A
= +25°C Surge Current A: 2.00 A,
sinewave, Pw = 8.3 ms
Electrical Specifications @ T
A
= +25°C (unless otherwise specified)
I
O
(PCB)
JEDEC
TYPE#
V
BR
@ 100
A
V
RWM
TA =
o
+75 C
(1)
V
F1
I
F
= 10
mA
V
F2
I
F
= 100*
mA
T
rr 1
I
R1
@ 20
Vdc
I
R2
@ 75
Vdc
I
R3
I
R4
Capacitance Capacitance
@ 20 Vdc @ 75 Vdc
@0V
@1.5 V
T
A
=150°C T
A
=150°C
Volts
1N914
1N4148-1
1N4531
100
100
100
Volts
(pk)
75
75
75
mA
200
200
200
Vdc
0.8
0.8
0.8
Vdc
1.2
1.2
1.2
nsec
5
5
5
nA
25
35
35
nA
500
500
500
A
35
35
35
A
75
75
75
pF
4.0
4.0
4.0
pF
2.8
2.8
2.8
1. I
F
= I
R
= 10 mA, R
L
= 100 ohms.
* For 1N914 V
F2
is measured at I
F
= 50 mA dc
Thermal Characteristics
R
ᶿ
JL (2)
(L = .375 inch)
250
o
C/W
325
o
C/W
R
ᶿ
JA(PCB) (2) (3)
(2)
(3)
See figures 11, 12, and 13 of MIL-PRF-19500/116 for thermal impedance curves.
T
A
= +75
o
C for axial leaded devices on printed circuit board. PCB = FR4- .0625 inch (1.59 mm) 1 layer,1 oz Cu, horizontal, in still air; pads for axial device
= .092 inch (2.34mm) diameter, strip = 0.30 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L < 0.187 inch (< 4.75 mm); R
ᶿJA
with a defined PCB
thermal resistance condition included, is measured at I
O
= 200 mA dc.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

JAN1N914相似产品对比

JAN1N914 JANTX1N4148-1
描述 Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
厂商名称 VPT Inc VPT Inc
包装说明 O-LALF-W2 O-LALF-W2
Reach Compliance Code compliant compliant
Is Samacsys N N
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED
外壳连接 ISOLATED ISOLATED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-35 DO-35
JESD-30 代码 O-LALF-W2 O-LALF-W2
JESD-609代码 e0 e0
元件数量 1 1
端子数量 2 2
最大输出电流 0.075 A 0.2 A
封装主体材料 GLASS GLASS
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
最大功率耗散 0.25 W 0.5 W
认证状态 Qualified Qualified
参考标准 MIL-19500/116 MIL-19500/116
最大重复峰值反向电压 75 V 75 V
最大反向恢复时间 0.005 µs 0.005 µs
表面贴装 NO NO
端子面层 TIN LEAD TIN LEAD
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL
Base Number Matches 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2102  1600  211  2667  634  5  14  3  56  4 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved