MAGNA
TEC
20.0
5.0
BUZ905DP
BUZ906DP
MECHANICAL DATA
Dimensions in mm
3.3 Dia.
P–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0
1.0
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2
0.6
2.8
3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ905DP
-160V
BUZ906DP
-200V
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
MAGNA
TEC
Characteristic
BV
DSX
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
BUZ905DP
BUZ906DP
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Test Conditions
V
GS
= 10V
I
D
= -10mA
V
DS
= 0
V
DS
= -10V
V
GD
= 0
BUZ905DP
BUZ906DP
I
G
= ±100µA
I
D
= -100mA
I
D
= -16A
V
DS
= -160V
I
DSX
Drain – Source Cut–Off Current
V
GS
= 10V
BUZ905DP
V
DS
= -200V
BUZ906DP
yfs*
Forward Transfer Admittance
V
DS
= -10V
I
D
= -3A
1.4
Min.
-160
-200
±14
-0.1
Typ.
Max.
Unit
V
V
-1.5
-12
-10
V
V
mA
-10
4
S
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Characteristic
C
iss
C
oss
C
rss
t
on
t
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
Min.
Typ.
1900
900
60
150
110
Max.
Unit
pF
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle
≤
2%.
300
Derating Chart
250
CH AN NE L D ISS IP ATION (W )
200
150
100
50
0
0
25
50
75
100
125
150
T
C
— CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
MAGNA
TEC
-22
-20
-18
I
D
— D R AIN C U RR EN T (A)
BUZ905DP
BUZ906DP
Typical Output Characteristics
T
C
= 25˚C
-7V
-6V
-22
-20
-18
I
D
— D R AIN C U RR EN T (A)
Typical Output Characteristics
T
C
= 75˚C
-16
-14
-12
-10
-
8
-16
-7V
-14
-12
-10
-
8
-6V
-5V
-5V
P
C
-4V
P
C
H
=
25
H
=
0W
-3V
25
-4V
0W
-6
-4
-2
-6
-4
-3V
-2V
-2V
-2
-1V
-1V
0
0
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
V
DS
— DRAIN – SOURCE VOLTAGE (V)
V
DS
— DRAIN – SOURCE VOLTAGE (V)
-100
Forward Bias Safe Operating Area
T
C
= 25˚C
G
FS
— TR AN SC ON DU C TAN CE (S)
100
V
DS
= 20V
Transconductance
I
D
— D R AIN C U RR EN T (A)
-10
DC
10
T
C
= 25˚C
T
C
= 75˚C
OP
ER
AT
IO
N
-1
BUZ905D
BUZ906D
1
-160V
-0.1
-1
-10
-100
-200V
0.1
-1000
0
2
4
6
8
10
12
14
16
V
DS
— DRAIN – SOURCE VOLTAGE (V)
I
D
— DRAIN CURRENT (A)
Drain – Source Voltage
vs
-16
-14
V
DS
— DR AIN – S OU RC E V OLTAGE (V )
Gate – Source Voltage
T
C
= 25˚C
-22
-20
-18
Typical Transfer Characteristics
V
DS
= -10V
T
C
= 25˚C
T
C
= 75˚C
T
C
= 100˚C
-12
I
D
— D RA IN C UR R EN T (A)
-16
-14
-12
-10
-8
-6
-4
-2
-10
-8
-6
I
D
= -14A
I
D
= -9A
-4
I
D
= -5A
-2
I
D
= -3A
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
V
GS
— GATE – SOURCE VOLTAGE (V)
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
V
GS
— GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
