MAG90X95: 产品描述Power Field-Effect Transistor, 8A I(D), 160V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小24KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

下载文档详细参数选型对比全文预览

MAG90X95概述

Power Field-Effect Transistor, 8A I(D), 160V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

MAG90X95规格参数

参数名称	属性值
厂商名称	TT Electronics plc
包装说明	FLANGE MOUNT, O-MBFM-P4
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
外壳连接	SOURCE
配置	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	160 V
最大漏极电流 (ID)	8 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-MBFM-P4
元件数量	2
端子数量	4
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM)	8 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

MAGNA

TEC

40.03 (1.576)

Max.

4.47 (0.176)

Rad.

2 Pls.

MAG90X95

MAG91X96

MECHANICAL DATA

Dimensions in mm

COMPLIMENTARY PAIR DUAL

CHANNEL

POWER MOSFET

POWER MOSFETS FOR

AUDIO APPLICATIONS

22.23 (0.875)

Max.

11.43 (0.450)

6.35 (0.250)

12.19 (0.48)

1.63 (0.064) 11.18 (0.44)

1.52 (0.060)

1.09 (0.043)

0.97 (0.038)

Dia.

30.23 (1.190)

30.07 (1.184)

72˚

18˚

11.94 (0.470)

Dia.

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

4.09 (0.161)

3.84 (0.161)

2 Pls

7.11 (0.280)

6.86 (0.270)

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION

11.30 (0.445)

10.67 (0.420)

4.88 (0.192)

4.78 (0.188)

1.88 (0.074)

1.78 (0.070)

3.56 (0.140)

3.43 (0.135)

16.97 (0.668)

16.87 (0.664)

TO-3 (4 PIN Header)

Pin 1 - P-Ch Drain

Pin 3 - N-Ch Gate

Pin 2 - N-Ch Drain

Pin 4 - P-Ch Gate

Case - Source (common)

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSX

Drain – Source Voltage

GSS

D(PK)

stg

θJC

Magnatec.

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

Telephone +44(0)1455 554711.

Fax +44(0)1455 558843.

E-mail:

magnatec@semelab.co.uk

Website:

http://www.semelab.co.uk

MAG90X95

±160V

±8A

@ T

case

= 25°C

MAG91X96

±200V

±14V

125W

–55 to 150°C

150°C

1°C/W

Prelim. 1/98

MAG90X95相似产品对比

	MAG90X95	MAG91X96
描述	Power Field-Effect Transistor, 8A I(D), 160V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 8A I(D), 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
厂商名称	TT Electronics plc	TT Electronics plc
包装说明	FLANGE MOUNT, O-MBFM-P4	FLANGE MOUNT, O-MBFM-P4
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
Is Samacsys	N	N
外壳连接	SOURCE	SOURCE
配置	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
最大漏极电流 (ID)	8 A	8 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-MBFM-P4	O-MBFM-P4
元件数量	2	2
端子数量	4	4
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL
封装形状	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM)	8 A	8 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	PIN/PEG	PIN/PEG
端子位置	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

MAG90X95

MAG90X95概述

MAG90X95规格参数

文档预览

MAG90X95相似产品对比

推荐资源