DISCRETE SEMICONDUCTORS
DATA SHEET
BFC505
NPN wideband cascode transistor
Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES
•
Small size
•
High power gain at low bias current and high
frequencies
•
High reverse isolation
•
Low noise figure
•
Gold metallization ensures excellent reliability
•
Minimum operating voltage V
C2−E1
= 1 V.
APPLICATIONS
•
Low voltage, low current, low noise and high gain
amplifiers
•
Oscillator buffer amplifiers
•
Wideband voltage-to-current converters.
b1
handbook, halfpage
BFC505
PINNING - SOT353
PIN
1
2
3
4
5
SYMBOL
b
2
e
1
b
1
c
1
/e
2
c
2
base 2
emitter 1
base 1
collector 1/emitter 2
collector 2
DESCRIPTION
5
4
b2
c2
c1/e2
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
1
Top view
2
3
e1
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
b
2
connected to ground via 1 nF (0603) capacitor, e
1
connected directly to ground.
SYMBOL
C
re
s
21
⁄
s
12
MSG
F
2
PARAMETER
feedback capacitance C
B1−C2
maximum isolation
maximum stable power gain
noise figure
CONDITIONS
I
e
= 0; V
C2-E1
= 0; f = 1 MHz
I
C
= 5 mA; V
C2
= V
B2
= 3 V;
f = 900 MHz
I
C
= 0.5 mA; V
C2
= V
B2
= 1 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 500 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
MIN.
−
60
−
−
−
−
−
TYP.
−
−
22
1.1
1.8
−
−
MAX.
10
−
−
1.4
2.1
230
115
UNIT
fF
dB
dB
dB
dB
K/W
K/W
R
th j-s
thermal resistance from
junction to soldering point
single loaded
double loaded
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
up to T
s
= 118
°C;
note 1
−
−65
−
BFC505
MAX.
UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
20
8
2.5
18
500
+175
175
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
single loaded
double loaded
CONDITIONS
VALUE
230
115
UNIT
K/W
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
−
−
−
120
BFC505
MAX.
−
−
−
50
250
−
−
10
−
−
−
−
−
−
−
−
−
1.4
2.1
−
−
UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
c
C
re2
C
re
MSG
collector-base breakdown voltage I
C
= 2.5
µA;
I
E
= 0
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
I
C
= 10
µA;
I
B
= 0
I
E
= 2.5
µA;
I
C
= 0
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
C
= 5 mA; V
C2-E1
= 3 V; f = 1 GHz
I
E
= i
e
= 0; V
C2-B2
= 0; f = 1 MHz
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
I
C
= 0.25 mA; V
C2-E1
= 1 V;
f = 300 MHz; T
amb
= 25
°C
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz;
T
amb
= 25
°C
s
21
2
20
8
2.5
−
60
−
−
−
−
−
−
−
−
−
−
40
60
40
−
−
−
−
V
V
V
nA
AC characteristics of the cascode configuration measured in test circuit (note
1)
transition frequency
collector capacitance T2
feedback capacitance T2
feedback capacitance
maximum stable power gain;
note 2
7.3
0.4
250
−
25
22
23
21
16
11
45
68
48
1.1
1.8
3.5
−20
GHz
pF
fF
fF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
insertion power gain
I
C
= 0.5 mA; V
C2-E1
= 3 V;
f = 300 MHz; T
amb
= 25
°C
I
C
= 5 mA; V
C2-E1
= 3 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz;
T
amb
= 25
°C
s
21
⁄
s
12
2
maximum isolation; note 3
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 900 MHz
I
C
= 5 mA; V
C2-E1
= 3 V;
f = 900 MHz
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz
F
noise figure
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 500 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 1 V;
f = 2 GHz;
Γ
S
=
Γ
opt
IP
3
third order intercept point (input)
note 4
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
Notes
1. V
B2
= V
C2−E1
/2 + 0.6 V
2. MSG = s
12
⁄
s
21
2
2
2
1
+
s
11
×
s
22
–
s
12
×
s
21
–
s
11
–
s
22
2
×
k
–
k
–
1
; k
=
----------------------------------------------------------------------------------------------------------------
-
2
×
s
12
×
s
21
BFC505
3. Maximum isolation is defined as the isolation when S
21
of the amplifier is reduced to unity (buffer application).
4. I
C
= 1 mA; V
CE
= 3 V; R
S
= 50
Ω;
Z
L
= opt; T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at
f
(2p−q)
= 904 MHz.
handbook, halfpage
600
MBG208
MBG209
handbook, halfpage
12
Ptot
(mW)
400
double loaded
fT
(GHz)
8
VC2-E1 = 12 V
9V
6V
single loaded
200
4
3V
0
0
50
100
150
Ts (
o
C)
200
0
10
−1
1
10
IC (mA)
10
2
f = 1 GHz; T
amb
= 25
°C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
Fig.3
Transition frequency as a function of
collector current; typical values.
1996 Oct 08
5
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