LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
SEME
BFC47
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
20.80 (0.819)
21.46 (0.845)
3.55 (0.140)
3.81 (0.150)
4.50
(0.177)
M ax.
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
V
DSS
I
D(cont)
R
DS(on)
600V
18.0A
Ω
0.40Ω
Terminal 1
Gate
Terminal 3
Source
19.81 (0.780)
20.32 (0.800)
Terminal 2
Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
600
18
72
±30
310
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
18
0.40
Min.
600
Typ.
Max. Unit
V
250
1000
±100
4
µA
nA
V
A
Ω
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
LAB
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
Min.
Typ.
2400
436
154
87
11
46
14
23
63
23
Max. Unit
2950
610
230
130
16
69
28
46
95
46
ns
nC
pF
SEME
BFC47
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/µs
152
2.5
334
5
Min.
Typ.
Max. Unit
18.5
A
72
1.3
668
10
V
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
Test Conditions
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
Min.
310
Typ.
Max. Unit
W
SOA2
I
LM
Safe Operating Area
Inductive Current Clamped
310
72
W
A
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
0.40
°C/W
40
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
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