INTEGRATED CIRCUITS
DATA SHEET
74HC1GU04
Inverter
Product specification
File under Integrated Circuits, IC06
1998 Nov 18
Philips Semiconductors
Product specification
Inverter
FEATURES
•
Wide operating voltage:
2.0 to 6.0 V
•
Symmetrical output impedance
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard.
DESCRIPTION
The 74HC1GU04 is a high-speed
Si-gate CMOS device.
The 74HC1GU04 provides the
inverting single stage function.
The standard output currents are
1
⁄
2
compared to the 74HCU04.
FUNCTION TABLE
See note 1.
INPUT
inA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
outY
H
L
Notes
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
= 6.0 ns.
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
propagation
delay inA to outY
input capacitance
power
dissipation
capacitance
notes 1 and 2
CONDITIONS
C
L
= 15 pF;
V
CC
= 5 V
74HC1GU04
TYP.
5
5
14
UNIT
ns
pF
pF
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. For HC1G the condition is V
I
= GND to V
CC.
PINNING
PIN
1
2
3
4
5
n.c.
inA
GND
outY
V
CC
SYMBOL
DESCRIPTION
not connected
data input
ground (0 V)
data output
DC supply voltage
1998 Nov 18
2
Philips Semiconductors
Product specification
Inverter
ORDERING INFORMATION
PACKAGES
OUTSIDE NORTH
AMERICA
74HC1GU04GW
TEMPERATURE
RANGE
−40
to +125
°C
PINS
5
PACKAGE
SC-88A
MATERIAL
plastic
74HC1GU04
CODE
SOT353
MARKING
HD
handbook, halfpage
n.c. 1
inA 2
GND
3
MNA042
5 VCC
U04
4
outY
handbook, halfpage
2
inA
outY
4
MNA043
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2
1
MNA044
4
handbook, halfpage
inA
outY
MNA045
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Nov 18
3
Philips Semiconductors
Product specification
Inverter
RECOMMENDED OPERATING CONDITIONS
74HC1GU04
74HC1G
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient
temperature range
see DC and AC
characteristics per device
CONDITIONS
MIN.
2.0
0
0
−40
−
−
−
−
−
+25
−
−
−
TYP.
5.0
MAX.
6.0
V
CC
V
CC
+125
1000
500
400
V
V
V
°C
ns
ns
ns
UNIT
input rise and fall times except V
CC
= 2.0 V
for Schmitt-trigger inputs
V
CC
= 4.5 V
V
CC
= 6.0 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
±I
IK
±I
OK
±I
O
±I
CC
T
stg
P
D
PARAMETER
DC supply voltage
DC input diode current
(1)
DC output diode current
(1)
DC output source or sink
current standard outputs
(1)
DC V
CC
or GND current for
types with standard outputs
(1)
storage temperature range
power dissipation per
for temperature range:
−40
to +125
°C;
package 5 pins plastic SC-88A above +55
°C
P
D
derates linearly with
2.5 mW/K
V
I
< −0.5
or V
I
>
V
CC
+ 0.5 V
V
O
< −0.5
or V
O
>
V
CC
+ 0.5 V
−0.5
V
<
V
O
<
V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
20
20
12.5
25
+150
200
UNIT
V
mA
mA
mA
mA
°C
mW
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Nov 18
4
Philips Semiconductors
Product specification
Inverter
DC CHARACTERISTICS FOR THE 74HC1GU04
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
4.5
6.0
V
IL
LOW-level input voltage
2.0
4.5
6.0
V
OH
HIGH-level output
voltage; all outputs
V
I
= V
IH
or V
IL
,
−I
O
= 20
µA
V
I
= V
IH
or V
IL
,
−I
O
= 2.0 mA
V
I
= V
IH
or V
IL
,
−I
O
= 2.6 mA
V
I
= V
IH
or V
IL
,
I
O
= 20
µA
V
I
= V
IH
or V
IL
,
I
O
= 2.0 mA
V
I
= V
IH
or V
IL
,
I
O
= 2.6 mA
V
I
= V
CC
or GND
2.0
4.5
6.0
V
OH
HIGH-level output
voltage; standard
outputs
LOW-level output
voltage; all outputs
4.5
6.0
2.0
4.5
6.0
V
OL
LOW-level output
voltage; standard
outputs
input leakage current
quiescent supply
current
4.5
6.0
6.0
MIN.
1.7
3.6
4.8
−
−
−
1.8
4.0
5.5
4.13
5.63
−
−
−
−
−
−
−
T
amb
(°C)
−40
to +85
TYP.
(1)
1.4
2.6
3.4
0.6
1.9
2.6
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX.
−
−
−
0.3
0.9
1.2
−
−
−
−
−
0.2
0.5
0.5
0.33
0.33
1.0
10
74HC1GU04
−40
to +125
MIN.
1.7
3.6
4.8
−
−
−
1.8
4.0
5.5
3.7
5.2
−
−
−
−
−
−
−
MAX.
−
−
−
0.3
0.9
1.2
−
−
−
−
−
0.2
0.5
0.5
0.4
0.4
1.0
20
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
V
OL
I
I
I
CC
Note
V
I
= V
CC
or GND, 6.0
I
O
= 0
1. All typical values are measured at T
amb
= 25
°C.
1998 Nov 18
5
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