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BYV28-150

产品描述Super Fast Recovery Rectifier, VRRM MAX (V): 150V; IAV MAX (A): 3.5A; VFM MAX (V): 1.02V; @ IF (A): 3.5A; IFSM MAX (A): 90A; IR MAX (UA): 5uA; @VR (V): 150V; TRR MAX (NS): 35ns; Package: DO-27
产品类别分立半导体    二极管   
文件大小320KB,共2页
制造商Galaxy Microelectronics
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BYV28-150概述

Super Fast Recovery Rectifier, VRRM MAX (V): 150V; IAV MAX (A): 3.5A; VFM MAX (V): 1.02V; @ IF (A): 3.5A; IFSM MAX (A): 90A; IR MAX (UA): 5uA; @VR (V): 150V; TRR MAX (NS): 35ns; Package: DO-27

BYV28-150规格参数

参数名称属性值
厂商名称Galaxy Microelectronics
零件包装代码DO-27
Reach Compliance Codeunknown
Is SamacsysN
二极管类型RECTIFIER DIODE
Base Number Matches1

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BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BYV28-50(Z)
- -
- BYV28-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 3.5, 3.0 A
SUPER FAST RECT IFIERS
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
DO - 27
MECHANICAL DATA
Cas e: JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYV28 BYV28 BYV28 BYV28 BYV28 BYV28 BYV28
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
3.5
300
210
300
400
280
400
600
420
600
V
V
V
A
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
I
FSM
90.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.02
5.0
100.0
35
100
75
- 55 ----- + 125
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V D C.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 1764115
BL
GALAXY ELECTRICAL
1.

 
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